Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE243 (NPN) and NTE244 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: • High DC Current Gain: hFE = 3000 Typ @ IC = 4A • Collector–Emitter Sustainin

Darlington Transistors

Silicon NPN Transistor High Voltage Amp/Switch (Compl to NTE2431)

Description: The NTE2430 is a silicon NPN transistor in a SOT–89 type surface mount package designed for use in amplifier and switching switching applications.

Silicon PNP Transistor High Voltage Amp/Switch (Compl to NTE2430)

Description: The NTE2431 is a silicon PNP transistor in a SOT–89 type surface mount package designed for use in amplifier and switching switching applications.

Complementary Transistors

Complementary Transistors

POWER TRANSISTORS(6A,65W)

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS

POWER TRANSISTORS(6A,65W)

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS

Complementary Silicon Plastic Power Transistors

6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80–100 VOLTS 65 WATTS . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc • Collector Emitter Sustaining Voltage —

POWER TRANSISTORS(6A,65W)

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS

Complementary Silicon Plastic Power Transistors

6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80–100 VOLTS 65 WATTS . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc • Collector Emitter Sustaining Voltage —