Silicon Complementary Transistors General Purpose Amplifier, Switch

Description: The NTE24 (NPN) and NTE25 (PNP) are complementary silicon transistors in a TO237 type package designed for general purpose medium power amplifier and switching circuits that require collector currents to 1A. Features: • High Collector–Emitter Breakdown Voltage: VCEO = 80V

Complementary Transistors

Silicon Complementary Transistors High Voltage Video Amplifier

Description: The NTE191 (NPN) and NTE240 (PNP) are silicon complementary transistors in a TO202N type package designed for high–voltage video and luminance output stages in TV receivers. Features: • High Collector–Emitter Breakdown Voltage: V(BR)CEO = 300V (Min) @ IC = 1mA • Low Coll

Silicon PNP Transistor RF Stages in FM Front Ends

Description: The NTE2401 is a silicon PNP transistor in a plastic SOT–23 type surface mount package designed for use in RF stages in FM front–ends in common base configuration for SMD applications.

Silicon Complementary Transistors Low Noise, UHF/VHF Amplifier

Description: The NTE2402 (NPN) and NTE2403 (PNP) are silicon complementary transistors in an SOT–23 type surface mount package designed for use in UHF and microwave amplifiers in thick and thin–film circuits, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. T

Silicon Complementary Transistors Low Noise, UHF/VHF Amplifier

Description: The NTE2402 (NPN) and NTE2403 (PNP) are silicon complementary transistors in an SOT–23 type surface mount package designed for use in UHF and microwave amplifiers in thick and thin–film circuits, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. T

Silicon Complementary Transistors Darlington, General Purpose

Description: The NTE2404 (NPN) and NTE2405 (PNP) are silicon complementary Darlington transistors in an SOT–23 type surface mount case designed for general–purpose applications.

Silicon Complementary Transistors Darlington, General Purpose

Description: The NTE2404 (NPN) and NTE2405 (PNP) are silicon complementary Darlington transistors in an SOT–23 type surface mount case designed for general–purpose applications.

Silicon NPN Transistor General Purpose Amp, Surface Mount (Compl to NTE2407)

Silicon NPN Transistor General Purpose Amp, Surface Mount (Compl to NTE2407)

Silicon PNP Transistor General Purpose Amp, Surface Mount (Compl to NTE2406)

Silicon PNP Transistor General Purpose Amp, Surface Mount (Compl to NTE2406) Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector–Emitter Voltage, VCEO . . . . . . . . . .

Silicon NPN Transistor General Purpose Amp, Surface Mount (Compl to NTE2409)

Description: The NTE2408 is a silicon NPN general purpose transistor in a SOT–23 type surface mount package designed for use in driver stages of audio amplifiers in thick and thin–film hybrid circuits.

Silicon PNP Transistor General Purpose Amp, Surface Mount (Compl to NTE2408)

Description: The NTE2409 is a silicon PNP general purpose transistor in a SOT–23 type surface mount package designed for use in driver stages of audio amplifiers in thick and thin–film hybrid circuits.

Silicon Complementary Transistors Audio Power Amplifier, Switch

Description: The NTE241 (NPN) and NTE242 (PNP) are silicon complementary transistors in a TO220 type package designed for use in power amplifier and switching circuits.

Silicon NPN Transistor High Voltage Amp/Driver (Comp to NTE2411)

Description: The NTE2410 is a silicon NPN transistor in an SOT–23 type surface mount case designed for use in high voltage applications.

Silicon PNP Transistor High Voltage Amp/Driver (Compl to NTE2410)

Description: The NTE2411 is a silicon PNP transistor in an SOT–23 type surface mount case designed for use in high voltage applications.

Silicon NPN Transistor General Purpose, High Voltage Amp, (Compl to NTE2413)

Description: The NTE2412 is a silicon NPN transistor in an SOT–23 type surface mount package designed for use primarily in telephone and professional communication equipment.

Silicon PNP Transistor General Purpose, High Voltage Amp, (Compl to NTE2412)

Description: The NTE2413 is a silicon PNP transistor in an SOT–23 type surface mount package designed for use primarily in telephone and professional communication equipment.

Silicon Complementary Transistors Digital w/2 Built-In Bias 10k Resistors (Surface Mount)

Features: • Built–In Bias Resistors • Small SOT–23 Surface Mount Package Applications: • Switching Circuits • Inverters • Interface Circuits • Driver

Silicon Complementary Transistors Digital w/2 Built-In Bias 10k Resistors (Surface Mount)

Features: • Built–In Bias Resistors • Small SOT–23 Surface Mount Package Applications: • Switching Circuits • Inverters • Interface Circuits • Driver

Silicon Complementary Transistors High Current General Purpose Amp/Switch

Features: • Built–In Bias Resistors • Small SOT–23 Surface Mount Package Applications: • Switching Circuits • Inverters • Interface Circuits • Driver

Silicon Complementary Transistors High Current General Purpose Amp/Switch

Features: • Built–In Bias Resistors • Small SOT–23 Surface Mount Package Applications: • Switching Circuits • Inverters • Interface Circuits • Driver

Silicon Complementary Transistors Digital w/2 Built-In Bias 47k Resistors (Surface Mount)

Silicon Complementary Transistors Digital w/2 Built–In Bias 47k Resistors (Surface Mount) Features: • Built–In Bias Resistors • Small SOT–23 Surface Mount Package Applications: • Switching Circuits • Inverters • Interface Circuits • Driver

Silicon Complementary Transistors Digital w/2 Built-In Bias 47k Resistors (Surface Mount)

Silicon Complementary Transistors Digital w/2 Built–In Bias 47k Resistors (Surface Mount) Features: • Built–In Bias Resistors • Small SOT–23 Surface Mount Package Applications: • Switching Circuits • Inverters • Interface Circuits • Driver

Silicon Complementary Transistors Audio Power Amplifier, Switch

Description: The NTE241 (NPN) and NTE242 (PNP) are silicon complementary transistors in a TO220 type package designed for use in power amplifier and switching circuits.

Silicon Complementary Transistors Darlington Switch

Description: The NTE2426 and NTE2427 are silicon planer Darlington transistors in a SOT–89 type surface mount package designed for use in industrial switching applications such as print hammer, solenoid, relay, and lamp drivers.

Silicon Complementary Transistors Darlington Switch

Description: The NTE2426 and NTE2427 are silicon planer Darlington transistors in a SOT–89 type surface mount package designed for use in industrial switching applications such as print hammer, solenoid, relay, and lamp drivers.

Silicon Complementary Transistors General Purpose Switch

Description: The NTE2428 and NTE2429 are silicon complementary transistors in a SOT–89 type surface mount package designed for use in thick and thin film circuits. Typical applications include telephone and general industrial.

Silicon Complementary Transistors General Purpose Switch

Description: The NTE2428 and NTE2429 are silicon complementary transistors in a SOT–89 type surface mount package designed for use in thick and thin film circuits. Typical applications include telephone and general industrial.

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE243 (NPN) and NTE244 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: • High DC Current Gain: hFE = 3000 Typ @ IC = 4A • Collector–Emitter Sustainin

Silicon NPN Transistor High Voltage Amp/Switch (Compl to NTE2431)

Description: The NTE2430 is a silicon NPN transistor in a SOT–89 type surface mount package designed for use in amplifier and switching switching applications.

Silicon PNP Transistor High Voltage Amp/Switch (Compl to NTE2430)

Description: The NTE2431 is a silicon PNP transistor in a SOT–89 type surface mount package designed for use in amplifier and switching switching applications.

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE243 (NPN) and NTE244 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: • High DC Current Gain: hFE = 3000 Typ @ IC = 4A • Collector–Emitter Sustainin

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: • High DC Current Gain: hFE = 4000 Typ @ IC = 5A • Monolithic Construction with B

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: • High DC Current Gain: hFE = 4000 Typ @ IC = 5A • Monolithic Construction with B

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE247 (NPN) and NTE248 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: • High DC Current Gain: hFE = 3500 Typ @ IC = 5A • Collector–Emitter Sustainin

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE247 (NPN) and NTE248 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: • High DC Current Gain: hFE = 3500 Typ @ IC = 5A • Collector–Emitter Sustainin

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE249 (NPN) and NTE250 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in complementary general purpose amplifier applications. Features: • High DC Current Gain: hFE = 3500 Typ @ IC = 10A • Monolithic Cons

Bi-Polar Transistor Selector Guide

Bi-Polar Transistor Selector Guide