Silicon Power Transistor High Power Audio Amplifier

Description: The NTE180 (PNP) and NTE181 (NPN) are silicon complementary transistors in a TO3 type case designed for use as output devices in complementary audio amplifiers to 100 watts music power per channel. Features: • High DC Current Gain: hFE = 25 – 100 @ IC = 7.5A • Excellent

Complementary Transistors

Integrated Circuit Color TV Video System

Description: The NTE1810 is an integrated circuit in a 28–Lead DIP ype package designed for color TV and VCR IF and audio IF processing circuits. Features: • PLL True Synchronous Detector Incorporates VCO • Quadrature Sound FM Detector • Frequency Characteristics Compensation Term

Integrated Circuit Capstan Interface Circuit for VCR

Description: The NTE1812 is an integrated circuit in a 20–Lead DIP type package designed for VCR capstan interface. Features: • The Functions Consist of: FG Amplifier 2H/4H/6H Automatic Detector FG Divider Gain Automatic Change Circuit • Supply Voltage: 5V

Integrated Circuit Capstan Interface Circuit for VCR

Description:\nThe NTE1812 is an integrated circuit in a 20–Lead DIP type package designed for VCR capstan interface.Features:\n• The Functions Consist of:\n   FG Amplifier\n   2H/4H/6H Automatic Detector\n   FG Divider\n   Gain Automatic Change Circuit\n• Supply Voltage: 5V

Integrated Circuit Color Signal Processor for VCR

Description: The NTE1813 is an integrated circuit in a 22–Lead DIP type package. When combined with the NTE1814, this device provides the functions which process VCR color signals at the 2H/4H/6H mode is NTSC systems. Features: • Low Operating Supply Voltage: VCC = 5V • Low Power Con

Integrated Circuit Color Signal Processor for VCR

Description:\nThe NTE1813 is an integrated circuit in a 22–Lead DIP type package. When combined with the NTE1814, this device provides the functions which process VCR color signals at the 2H/4H/6H mode is NTSC systems.Features:\n• Low Operating Supply Voltage: VCC = 5V\n• Low Power Consumption: 110m

Integrated Circuit CMOS, Color Processing Circuit for VCR

Description: The NTE1814 is a CMOS LSI integrated circuit in an 18–Lead DIP type package designed for use in VCR color signal processing circuits for VHS system video tape recorders. This device is used in configuration with the NTE1813 for color signal processing in 2, 4, and 6Hr modes in NTSC

Integrated Circuit Module, AF PO, 20W, Dual Power Supply

Features: • Small–Sized Package Allows Audio Sets to be made Slimmer • Facilitates Thermal Design of Slim Stereo Sets • Constant–Current Circuit Minimizes Pop Noise During Power ON/OFF • Possible to Design Electronic Supplementary Circuits: Pop Noise Muting During Power ON/OFF

Integrated Circuit Module, Dual AF PO, 6W/Ch Dual Power Supplies Req?셝

Features: • Built–In Muting Circuit to Cut Off Various Kinds of Shock Noise. • Greatly Reduced Heat Sink due to Case Temperature +125°C Guaranteed.

Integrated Circuit Module, AF PO, 20W, Dual Power Supply

Features: • Muting Curcuit to Cut Off Pop Noise

Integrated Circuit Module, AF PO, 25W/Ch, Dual Power Supply

Features: • Muting circuit to cut off pop noise • Greatly reduced heat sink due to case temperature +125°C guaranteed

Integrated Circuit Module, AF Power Amplifier, 30W/Ch

Features: Built–in muting circuit to cut off various kinds of pop noise Greatly reduced heat sink due to case temperature +125°C guaranteed Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Maximum Supply Voltage, VCCmax . . . . . . . . . . . . . . . . . . . . . .

VHF variable capacitance diode

DESCRIPTION The BB181 is a variable capacitance diode, fabricated in planar technology and encapsulated in the SOD523 (SC-79) ultra small plastic SMD package. FEATURES • Excellent linearity • Ultra small plastic SMD package • C28: 1 pF; ratio: 14. APPLICATIONS • Electronic tuning in satelli

Silicon NPN Planar RF Transistor

Features • Low noise figure • High power gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications    For low noise and high gain broadband amplifiers at    collector currents from 0.5 mA to 12 mA.

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60–80 VOLTS 12.5 WATTS . . . designed for low power audio amplifier and low current, high speed switching applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc — MJE171, MJE181 VCEO(sus) = 80 Vdc — MJE172, MJE182

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171,