VHF variable capacitance diode

DESCRIPTION The BB181 is a variable capacitance diode, fabricated in planar technology and encapsulated in the SOD523 (SC-79) ultra small plastic SMD package. FEATURES • Excellent linearity • Ultra small plastic SMD package • C28: 1 pF; ratio: 14. APPLICATIONS • Electronic tuning in satelli

VHF variable capacitance diode

DESCRIPTION The BB181 is a variable capacitance diode, fabricated in planar technology and encapsulated in the SOD523 (SC-79) ultra small plastic SMD package. FEATURES • Excellent linearity • Ultra small plastic SMD package • C28: 1 pF; ratio: 14. APPLICATIONS • Electronic tuning in satelli

VHF variable capacitance diode

VHF variable capacitance diode

RF Manual 16th edition

VHF variable capacitance diode

DESCRIPTION\nThe BB181 is a variable capacitance diode, fabricated in planar technology and encapsulated in the SOD523 (SC-79) ultra small plastic SMD package.FEATURES\n• Excellent linearity\n• Ultra small plastic SMD package\n• C28: 1 pF; ratio: 14.APPLICATIONS\n• Electronic tuning in satellite tun • Excellent linearity\n• Ultra small plastic SMD package\n• C28: 1 pF; ratio: 14.;

VHF variable capacitance diode

VHF variable capacitance diode

VHF variable capacitance diode

VHF variable capacitance diode

General description The BB181LX is a planar technology variable capacitance diode in a SOD882T ultra small leadless plastic SMD package. Features ■ Excellent linearity ■ Ultra small leadless SMD package ■ Cd(28V) : 1 pF; ratio: 14 Applications ■ Voltage Controlled Oscillators (VCO) ■ Elect

封装/外壳：SC-79，SOD-523 包装：托盘 描述：DIODE VHF VAR CAP 30V SOD523 分立半导体产品 二极管 - 可变电容（变容器，可变电抗器）

封装/外壳：SC-79，SOD-523 包装：托盘 描述：DIODE VHF VAR CAP 30V SOD523 分立半导体产品 二极管 - 可变电容（变容器，可变电抗器）

VHF variable capacitance diode

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VHF variable capacitance diode

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VHF variable capacitance diode

文件：69.8 Kbytes Page：8 Pages

Silicon NPN Planar RF Transistor

Features • Low noise figure • High power gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications    For low noise and high gain broadband amplifiers at    collector currents from 0.5 mA to 12 mA.

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60–80 VOLTS 12.5 WATTS . . . designed for low power audio amplifier and low current, high speed switching applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc — MJE171, MJE181 VCEO(sus) = 80 Vdc — MJE172, MJE182

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171,