Silicon NPN Transistor Darlington Preamp, Medium Speed Switch

Description: The NTE172A is a silicon NPN Darlington transistor in a TO92 type case designed for preamplifier input stages requiring input impedances of several megohms or extremely low level, high gain, low noise amplifier applications.

NTE172A Silicon NPN Transistor Darlington Preamp, Medium Speed Switch - 13

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Darlington transistors

GaAlAs Infrared Light Emitting Diode

GaAlAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : PO = 12 mW (typ.) ● Light emitting spectrum suited for silicon photodetectors : λP = 900 nm (typ.) ● Good optical power output linearity with respect to input current ● Wide d

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60–80 VOLTS 12.5 WATTS . . . designed for low power audio amplifier and low current, high speed switching applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc — MJE171, MJE181 VCEO(sus) = 80 Vdc — MJE172, MJE182

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171,

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE