GaAlAs Infrared Light Emitting Diode

GaAlAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : PO = 12 mW (typ.) ● Light emitting spectrum suited for silicon photodetectors : λP = 900 nm (typ.) ● Good optical power output linearity with respect to input current ● Wide d

42mm贯穿轴式直线步进电机

NEMA17贯穿轴式直线步进电机，高性能，长寿命，低噪音，高效率。可提供多种不同参数的电机和螺杆配套选择。 • 机座尺寸：NEMA17（42*42mm）；电机长度39.8mm• 额定电流2A• 额定推力70N@5RPS,24V• 丝杆直径6.35mm，螺距6.35mm，丝杆长度110mm;

42mm贯穿轴式直线步进电机

NEMA17贯穿轴式直线步进电机，高性能，长寿命，低噪音，高效率。可提供多种不同参数的电机和螺杆配套选择。 • 机座尺寸：NEMA17（42*42mm）；电机长度39.8mm• 额定电流1.5A• 额定推力36N@5RPS,24V• 丝杆直径6.35mm，螺距12.7mm，丝杆长度90mm;

42mm贯穿轴式直线步进电机

NEMA17贯穿轴式直线步进电机，高性能，长寿命，低噪音，高效率。可提供多种不同参数的电机和螺杆配套选择。 • 机座尺寸：NEMA17（42*42mm）；电机长度39.8mm• 额定电流1.5A• 额定推力255N@5RPS,24V• 丝杆直径6mm，螺距1mm，丝杆长度80mm;

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171,

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60–80 VOLTS 12.5 WATTS . . . designed for low power audio amplifier and low current, high speed switching applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc — MJE171, MJE181 VCEO(sus) = 80 Vdc — MJE172, MJE182

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE