POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60–80 VOLTS 12.5 WATTS . . . designed for low power audio amplifier and low current, high speed switching applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc — MJE171, MJE181 VCEO(sus) = 80 Vdc — MJE172, MJE182

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171,

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The MJE172 (PNP type) and MJE182 (NPN type) are silicon epitaxial planar, complementary transistors in Jedec SOT-32 plastic package, they are designed for low power audio amplifier and low current, high speed switching applications. ■ SGS-THOMSON PREFERRED SALESTYPES ■ COMPLEMENTARY

Low Power Audio Amplifier Low Current, High Speed Switching Applications

PNP Epitaxial Silicon Transistor Low Power Audio Amplifier Low Current, High Speed Switching Applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Complement to type MJE180/181/182 APPLICATIONS • For low power audio amplifier and low current high speed switching applications

isc Silicon PNP Power Transistor

DESCRIPTION • With TO-126 package • Complement to type MJE180/181/182 APPLICATIONS • For low power audio amplifier and low current high speed switching applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Complement to type MJE180/181/182 APPLICATIONS • For low power audio amplifier and low current high speed switching applications

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS ... designed for low power amplifier and low current, high speed switchii applications. FEATURES: * Collector-Emitter Sustaining VoHage- VCEO(SUS) =40 V (Min) - MJE170.MJE180 = 60 V (Min) - MJE171.MJE181

PNP General Purpose Transistor

FEATURES ● Low frequency amplifier ● Low current ● High speed switching applications

PNP PLASTIC POWER TRANSISTORS

MJE170, 171, 172 PNP PLASTIC POWER TRANSISTORS MJE180, 181, 182 NPN PLASTIC POWER TRANSISTORS

SILICON COMPLEMENTRY POWER TRANSISTOR

TO-126 Plastic-Encapsulate Transistors

FEATURES Low Power Audio Amplifier Low Current, High Speed Switching Applications

TO-126 Plastic-Encapsulate Transistors

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封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS PNP 80V 3A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-225AA，TO-126-3 包装：剪切带（CT）带盒（TB） 描述：TRANS PNP 80V 3A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon PNP transistor in a TO-126F Plastic Package.

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Silicon PNP Power Transistors

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Complementary Plastic Silicon Power Transistors 40 ??60 ??80 VOLTS 12.5 WATTS

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COMPLEMENTARY SILICON POWER TRANSISTORS

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PNP (LOW FREQUENCY AMPLIFIER)

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Complementary Plastic Silicon Power Transistors

Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171,

TO-126 Plastic-Encapsulate Transistors

FEATURES Low Power Audio Amplifier Low Current, High Speed Switching Applications

COMPLEMENTARY SILICON POWER TRANSISTORS

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Complementary Plastic Silicon Power Transistors 40 ??60 ??80 VOLTS 12.5 WATTS

文件：83.18 Kbytes Page：6 Pages

isc Silicon PNP Power Transistor

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GABINETE S ALMENDRA 175 X 124 X51 mm

Descripción Es un gabinete electrónico de escritorio, fabricado en dos piezas con plástico ABS. Aplicaciones Este gabinete puede ser usado para guardar componentes electrónicos en su interior, para proteger diseños de PCB o para montar diversos proyectos de electrónica.

GABINETE S NEGRO 175 X 124 X51 mm

Descripción Es un gabinete electrónico de escritorio, fabricado en dos piezas con plástico ABS. Aplicaciones Este gabinete puede ser usado para guardar componentes electrónicos en su interior, para proteger diseños de PCB o para montar diversos proyectos de electrónica.

DPDT basic relay

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DPDT basic relay

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Digital Multimeters Extended Specifications

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