Germanium PNP Transistor Horizontal Output Amplifier

Germanium PNP Transistor Horizontal Output Amplifier

Germanium Transistors

Integrated Circuit Control Voltage Generator

Description: The NTE1271 control voltage generator with three outputs is fabricated with bipolar linear technology. Two alternately exchangeble outputs are provided for two stabilized output levels controlled by an external signal. The NTE1271 is packaged in a 8−Lead SIP package with a heat

Integrated Circuit Dual, Audio Power Amp, 5W/Ch

Description:\nThe NTE1273 is a bipolar monolithic integrated circuit in a 20−Lead DIP type package. This 2 channel audio power amplifier is ideal for use in high power car radio applications.Features:\n• Low Distortion\n• Self centering Bias\n• High Peak Output Current\n• Dual Channel/BTL Amp Use\n•

Integrated Circuit Dual, Audio Power Amp, 5W/Ch

Description: The NTE1273 is a bipolar monolithic integrated circuit in a 20−Lead DIP type package. This 2 channel audio power amplifier is ideal for use in high power car radio applications. Features: • Low Distortion • Self centering Bias • High Peak Output Current • Dual Chan

Integrated Circuit Audio Power Amp, 5.8W

Features: • Few External Parts Required • Adjustable Closed−Loop Gain • High Sustaining Over Voltage • Excellent Ripple Rejection • High Power and Low Distortion • Audio Muting Circuit • Protection Circuit for Load Short, Excessive Supply Voltage, and Thermal Shutdown

Integrated Circuit Audio Power Amp, 5.8W

Features:\n• Few External Parts Required\n• Adjustable Closed−Loop Gain\n• High Sustaining Over Voltage\n• Excellent Ripple Rejection\n• High Power and Low Distortion\n• Audio Muting Circuit\n• Protection Circuit for Load Short, Excessive Supply Voltage, and Thermal Shutdown

PLASTIC SILICON RECTIFIER(VOLTAGE - 1250 to 1600 Volts CURRENT - 1.0 Ampere)

PLASTIC SILICON RECTIFIERS VOLTAGE 1250 to 1600 Volts CURRENT 1.0 Ampere FEATURES • Low forward voltage drop • High current capability • High reliability • High surge current capability • Exceeds environmental standards of MIL-S-19500/228 • In compliance with EU RoHS 2002

Complementary Darlington Power Transistors

Features • D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications • Electrically Similar to Popular TIP122 • Complement to MJD127

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

Silicon epitaxial planar type

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VOLTAGE REGULATOR