Medium Power Linear Switching Applications

PNP Epitaxial Darlington Transistor Features • Medium Power Linear Switching Applications • Complementary to TIP120 / TIP121 / TIP122

PNP Epitaxial Darlington Transistor

PNP Epitaxial Darlington Transistor Features • Medium Power Linear Switching Applications • Complementary to TIP120 / TIP121 / TIP122

Power Darlingtons for Linear and Switching Applications

TIP120, 121, 122 NPN PLASTIC POWER TRANSISTORS TIP125, 126, 127 PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications

EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING HAMMER DRIVER, PULSE MOTOR DRIVER)

SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES • High DC Current Gain : hFE=1000(Min.) at VCE=-3V, IC=-3A. • High Collector Breakdown Voltage : VCEO=-120V(Min.)

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS High Power Switching, Hammer Drive, Pulse Motor Drive and Inductive Load Drive Applications

Silicon Power darlington Complementary transistors

DESCRIPTION The CENTRAL SEMICONDUCTOR TIP120, TIP125 series types are Complementary Silicon Power Darlington Transistors designed for low speed switching and amplifier applications.

Si-Epitaxial PlanarTransistors

Si-Epitaxial PlanarTransistors • Collector current 5 A • Plastic case TO-220AB • Weight approx. 2.2 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

Silicon PNP Darlington Power Transistors

Features • Mounting Torgue: 5 in-lbs Maximum • The complementary NPN types are the TIP121/2/3 respectively • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 •

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for use in power linear and switching applications. NPN complements are TIP120-121-122 Compliance to RoHS.

BASE NPN / PNP

EPITAXIAL BASE NPN / PNP POWER DARLINGTONS

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • With TO-220C package • DARLNGTON • High DC current gain • Low collector saturation voltage • Complement to type TIP120/121/122 APPLICATIONS • Designed for general–purpose amplifier and low–speed switching applications

Silicon PNP Darlington Power Transistors

DESCRIPTION • With TO-220C package • DARLNGTON • High DC current gain • Low collector saturation voltage • Complement to type TIP120/121/122 APPLICATIONS • Designed for general–purpose amplifier and low–speed switching applications

PNP/NPN Silicon Power Transistor

FEATURES: * Medium Power Complementary silicon transistors * TIP120,121,122 Darlington TRANSISTOR (NPN) * TIP125,126,127 Darlington TRANSISTOR (PNP)

Darlington TRANSISTOR (NPN)

TO-220-3L Plastic-Encapsulate Transistors TIP120,121,122 Darlington TRANSISTOR (NPN) TIP125,126,127 Darlington TRANSISTOR (PNP) FEATURES ● Medium Power Complementary Silicon Transistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP120/121/122

Monolithic Construction With Built In Base-Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP120/121/122

Darlington Power Transistors (PNP)

Darlington Power Transistors (PNP) Features • Designed for general-purpose amplifier and low speed switching applications • RoHS Compliant

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The TIP122 are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications.The complementary PNP types are TIP127 respectively.

PNP SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

PNP SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS

Darlington Transistors

[SGS] POWER DARLINGTONS The TIP120, TIP121 and TIP122 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration in Jedec TO-220 plastic package, intended for use in power linear and switching applications. The complementary PNP types are the TIP125, TIP126 and TIP127 res

PNP Transistor Bare Die

Features: Collector current up to 5A Low VCE(sat) Very high hFE Solderable back metal High Reliability tested grades for Military + Space

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features ■ Low collector-emitter saturation voltage ■ Comp

PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Collec

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP120, TIP121 and TIP122 ● 65 W at 25°C Case Temperature ● 5 A Continuous Collector Current ● Minimum hFE of 1000 at 3 V, 3 A

Silicon PNP Darlington Power Transistors

DESCRIPTION • With TO-220C package • DARLNGTON • High DC current gain • Low collector saturation voltage • Complement to type TIP120/121/122 APPLICATIONS • Designed for general–purpose amplifier and low–speed switching applications

TO-220-3L Plastic-Encapsulate Transistors

TO-220-3L Plastic-Encapsulate Transistors TIP120,121,122 Darlington TRANSISTOR (NPN) TIP125,126,127 Darlington TRANSISTOR (PNP) FEATURES ● Medium Power Complementary Silicon Transistors

TO-220-3L Plastic-Encapsulate Transistors

FEATURES Medium Power Complementary Silicon Transistors

PNP Darlington Transistors

■ Features ● Collector Current Capability ICM=-5A ● Collector Emitter Voltage VCEO=-100V ● Medium Power Complementary Silicon Transistors

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS High Power Switching, Hammer Drive, Pulse Motor Drive and Inductive Load Drive Applications

Plastic-Encapsulated Transistors

PLASTIC POWER TRANSISTORS High Power Switching, Hammer Drive, Pulse Motor Drive and Inductive Load Drive Applications

达林顿管

Transistor 三极管

互补功率达林顿晶体管

Darlington TRANSISTOR (NPN)

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Complementary power Darlington transistors

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封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP DARL 100V 5A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Darlington TRANSISTOR (NPN)

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Silicon PNP transistor in a TO-220 Plastic Package.

文件：883.41 Kbytes Page：6 Pages

Silicon PNP Darlington Power Transistors

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封装/外壳：TO-220-3 包装：散装 描述：TRANS PNP DARL 100V 5A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon PNP Darlington Power Transistors

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Engine ignition

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TO-220 - Power Transistors and Darlingtons

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Silicon PNP Darlington Power Transistors

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Si-Epitaxial Planar Darlington Power Transistors

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PNP EPITAXIAL TRANSISTOR

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PNP EPITAXIAL TRANSISTOR

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Plastic Medium-Power Complementary Silicon Transistors

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Plastic Medium-Power Complementary Silicon Transistors

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Plastic Medium-Power Complementary Silicon Transistors

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TO-220-3L Plastic-Encapsulate Transistors

FEATURES Medium Power Complementary Silicon Transistors

TIP127A PNP Epitaxial Silicon Transistor

MEDIUM POWER LINEAR SWITCHING APPLICATIONS • Collector current 10A • Collector dissipation Pc = 75W (Tc = 25°C)

PNP Darlington Transistors

■ Features ● Collector Current Capability ICM=-8A ● Collector Emitter Voltage VCEO=-100V ● Medium Power Complementary Silicon Transistors

Silicon PNP Darlington Power Transistors

Features • Mounting Torgue: 5 in-lbs Maximum • The complementary NPN types are the TIP121/2/3 respectively • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 •

NPN/PNP SILICON POWER DARLINGTON TRANSISTORS

NPN/PNP SILICON POWER DARLINGTON TRANSISTORS Designed for General-Purpose Amplifier and Low-Speed Switching Applications.

DARLINGTON TRANSISTOR (NPN)

TIP120F,121F,122F DARLINGTON TRANSISTOR (NPN) TIP125F,126F,127F DARLINGTON TRANSISTOR (PNP) FEATURES ● Medium Power Complementary Silicon Transistors

NPN/PNP SILICON POWER DARLINGTON TRANSISTORS

NPN/PNP SILICON POWER DARLINGTON TRANSISTORS Designed for General-Purpose Amplifier and Low-Speed Switching Applications.

Darlington TRANSISTOR (NPN)

TIP120F,121F,122F Darlington TRANSISTOR (NPN) TIP125F,126F,127F Darlington TRANSISTOR (PNP) FEATURES Medium Power Complementary silicon transistors