Silicon Small Signal Schottky Diode

Description: The NTE112 is a metal to silicon junction diode in a DO35 type package primarly intended for UHF mixers and ultrafast switching applications.

General Purpose

Integrated Circuit TV Video IF Amplifier

Features:\n• High Power Gain: 48dB Typ @ f = 58MHz\n• AGC Operating by External DC Control Voltage\n• High Gain Reduction: 60dB Min @ f = 58MHz\n• Low Reverse Transfer Admittance: 1.0µmho Typ @ f = 58MHz\n• Nearly Constant Input and Output Admittance Over Entire AGC Range

Integrated Circuit TV Video IF Amplifier

Features: • High Power Gain: 48dB Typ @ f = 58MHz • AGC Operating by External DC Control Voltage • High Gain Reduction: 60dB Min @ f = 58MHz • Low Reverse Transfer Admittance: 1.0µmho Typ @ f = 58MHz • Nearly Constant Input and Output Admittance Over Entire AGC Range

JFET Chopper Transistor (N-Channel- Depletion)

JFET Chopper Transistor N–Channel — Depletion

SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS

Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Applications in Plastic

DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

POWER TRANSISTORS(2.0A,60-100V,50W)

Operational Amplifiers

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