TIP112晶体管资料

  • TIP112别名:TIP112三极管、TIP112晶体管、TIP112晶体三极管

  • TIP112生产厂家:美国得克萨斯仪表公司

  • TIP112制作材料:Si-N+Darl+Di

  • TIP112性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • TIP112封装形式:直插封装

  • TIP112极限工作电压:100V

  • TIP112最大电流允许值:4A

  • TIP112最大工作频率:<1MHZ或未知

  • TIP112引脚数:3

  • TIP112最大耗散功率:50W

  • TIP112放大倍数:β>1000

  • TIP112图片代号:B-10

  • TIP112vtest:100

  • TIP112htest:999900

  • TIP112atest:4

  • TIP112wtest:50

  • TIP112代换 TIP112用什么型号代替:BD265B,BD701,BDW23C,BDW53C,BDW63C,

TIP112价格

参考价格:¥0.9355

型号:TIP112 品牌:MULTICOMP 备注:这里有TIP112多少钱,2024年最近7天走势,今日出价,今日竞价,TIP112批发/采购报价,TIP112行情走势销售排行榜,TIP112报价。
型号 功能描述 生产厂家&企业 LOGO 操作
TIP112

POWERTRANSISTORS(2.0A,60-100V,50W)

MOSPEC

MOSPEC

MOSPEC
TIP112

DARLINGTON2AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS

MotorolaMotorola, Inc

摩托罗拉

Motorola
TIP112

NPNSILICONPOWERDARLINGTONS

NPNSILICONPOWERDARLINGTONS ●DesignedforComplementaryUsewith TIP115,TIP116andTIP117 ●50Wat25°CCaseTemperature ●4AContinuousCollectorCurrent ●MinimumhFEof500at4V,2A

POINNPower Innovations Ltd

Power Innovations Ltd

POINN
TIP112

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheTIP110andTIP112aresiliconEpitaxial-BaseNPNtransistorsinmonolithicDarlingtonconfigurationmountedinJedecTO-220plasticpackage.Theyareintentedforuseinmediumpowerlinearandswitchingapplications. ThecomplementaryPNPtypesareTIP115andTIP117. ■STMicroe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
TIP112

PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS

bocaBoca semiconductor corporation

博卡博卡半导体公司

boca
TIP112

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors •ComplementarytoTIP115/116/117 •HighDCCurrentGain:hFE=1000@VCE=4V,IC=1A(Min.) •LowCollector-EmitterSaturationVoltage •IndustrialUse

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
TIP112

EPITAXIALPLANARNPNTRANSISTOR(MONOLITHICCONSTRUCTIONWITHBUILTINBASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE.)

MONOLITHICCONSTRUCTIONWITHBUILTIN BASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE. FEATURES •HighDCCurrentGain. :hFE=1000(Min.),ᷤVCE=4V,IC=1A. •LowCollector-EmitterSaturationVoltage. •ComplementarytoTIP117.

KECKEC CORPORATION

KEC株式会社

KEC
TIP112

PLASTICPOWERTRANSISTORS

PLASTICPOWERTRANSISTORS IntendedforuseinMediumPowerLinearandSwitchingApplications TO-220PlasticPackage

TEL

TRANSYS Electronics Limited

TEL
TIP112

TECHNICALSPECIFICATIONSOFNPNDARLINGTONTRANSISTOR

Description Designedforuseingeneralpurposeamplifierandlow-speedswitchingapplications.

DCCOMDc Components

直流元件直流元件有限公司

DCCOM
TIP112

PlasticMedium-PowerComplementarySiliconTransistors

PlasticMedium-PowerComplementarySiliconTransistors Designedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain− hFE=2500(Typ)@IC =1.0Adc •Collector−EmitterSustainingVoltage−@30mAdc VCEO(sus)=60Vdc(Min)

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
TIP112

SiliconNPNDarlingtonPowerTransistors

DESCRIPTION •WithTO-220Cpackage •DARLINGTON •HighDCcurrentgain •Lowcollectorsaturationvoltage •ComplementtotypeTIP115/116/117 APPLICATIONS •Forindustrialuse

SAVANTIC

Savantic, Inc.

SAVANTIC
TIP112

DarlingtonPowerTransistors(NPN)

DarlingtonPowerTransistors(NPN) Features •Designedforgeneral-purposeamplifierandlowspeed switchingapplications •RoHSCompliant

TAITRON

TAITRON

TAITRON
TIP112

NPNEPITAXIALSILICONDARLINGTONTRANSISTOR

DESCRIPTION TheUTCTIP112isdesignedforsuchapplicationsas:DC/DCconverterssupplylineswitching,batterycharger,LCDbacklighting,peripheraldrivers,Driverinlowsupplyvoltageapplications(e.g.lampsandLEDs)andinductiveloaddriver(e.g.relays,buzzersandmotors). FEATURES *

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
TIP112

SiliconNPNDarlingtonPowerTransistor

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •ThecomplementaryPNPtypesaretheTIP115/116/117respectively •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •Mois

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
TIP112

SiliconNPNDarlingtonPowerTransistors

DESCRIPTION •WithTO-220Cpackage •DARLINGTON •HighDCcurrentgain •Lowcollectorsaturationvoltage •ComplementtotypeTIP115/116/117 APPLICATIONS •Forindustrialuse

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
TIP112

DARLINGTONTRANSISTOR(NPN)

FEATURES ●HighDCCurrentGain:hFE=1000@VCE=4V,IC=1A(Min.) ●LowCollector-EmitterSaturationVoltage ●IndustrialUse

FS

First Silicon Co., Ltd

FS
TIP112

SILICONDARLINGTONPOWERTRANSISTORS

SILICONDARLINGTONPOWERTRANSISTORS NPNepitaxial-basetransistorsinamonolithicDalringtoncircuitandhousedinaTO-220enveloppe. Theyaredesignedforgeneralpurposeamplifierandlow-speedswitchingapplications. PNPcomplementsareTIP115-116-117 CompliancetoRoHS.

COMSET

Comset Semiconductor

COMSET
TIP112

SiliconNPNtransistorinaTO-220PlasticPackage.

Descriptions SiliconNPNtransistorinaTO-220PlasticPackage. Features ComplementtoTIP117. Applications Mediumpowerlinearswitchingapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
TIP112

DARLINGTONTRANSISTOR(NPN)

TO-220-3LPlastic-EncapsulateTransistors FEATURES ●HighDCCurrentGain:hFE=1000@VCE=4V,IC=1A(Min.) ●LowCollector-EmitterSaturationVoltage ●IndustrialUse

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
TIP112

PLASTICPOWERTRANSISTORS

IntendedforuseinMediumPowerLinearandSwitchingApplications

CDIL

CDIL

CDIL
TIP112

SiliconPowerdarlingtonComplementarytransistors

CentralCentral Semiconductor Corp

美国中央半导体

Central
TIP112

PLASTICMEDIUM-POWERCOPLEMENTARYSILICONTRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
TIP112

SiliconNPNDarlingtonPowerTransistor

文件:285.31 Kbytes Page:2 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
TIP112

NPNEPITAXIALSILICONDARLINGTONTRANSISTOR

文件:189.65 Kbytes Page:4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
TIP112

SiliconNPNDarlingtonPowerTransistors

文件:124.43 Kbytes Page:4 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC
TIP112

封装/外壳:TO-220-3 包装:管件 描述:TRANS NPN DARL 100V 2A TO220-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
TIP112

封装/外壳:TO-220-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN DARL 100V 2A TO220 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
TIP112

PlasticMedium-PowerComplementarySiliconTransistors

文件:148.66 Kbytes Page:8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
TIP112

SiliconNPNDarlingtonPowerTransistor

文件:234.52 Kbytes Page:2 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
TIP112

PlasticMedium-PowerComplementarySiliconTransistors

文件:99.95 Kbytes Page:8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
TIP112

TO-220-PowerTransistorsandDarlingtons

文件:76.15 Kbytes Page:3 Pages

RECTRONRECTRON LTD

瑞创深圳市瑞创科技有限公司

RECTRON

SiliconNPNDarlingtonPowerTransistor

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •ThecomplementaryPNPtypesaretheTIP115/116/117respectively •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •Mois

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

EPITAXIALPLANARNPNTRANSISTOR(MONOLITHICCONSTRUCTIONWITHBUILTINBASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE.)

MONOLITHICCONSTRUCTIONWITHBUILTIN BASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE. FEATURES •HighDCCurrentGain. :hFE=1000(Min.),VCE=4V,IC=1A. •LowCollector-EmitterSaturationVoltage. •ComplementarytoTIP117F.

KECKEC CORPORATION

KEC株式会社

KEC

PLASTICPOWERTRANSISTORS

IntendedforuseinMediumPowerLinearandSwitchingApplications

CDIL

CDIL

CDIL

NPNEPITAXIALSILICONDARLINGTONTRANSISTOR

文件:189.65 Kbytes Page:4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

NPNEPITAXIALSILICONTRANSISTOR

文件:189.65 Kbytes Page:4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

EPITAXIALPLANARNPNTRANSISTOR

文件:450.47 Kbytes Page:2 Pages

KECKEC CORPORATION

KEC株式会社

KEC

EPITAXIALPLANARNPNTRANSISTOR

文件:450.47 Kbytes Page:2 Pages

KECKEC CORPORATION

KEC株式会社

KEC

PlasticMedium-PowerComplementarySiliconTransistors

文件:99.95 Kbytes Page:8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

PlasticMedium-PowerComplementarySiliconTransistors

文件:148.66 Kbytes Page:8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPNEPITAXIALSILICONTRANSISTOR

文件:189.65 Kbytes Page:4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

NPNEPITAXIALSILICONDARLINGTONTRANSISTOR

文件:189.65 Kbytes Page:4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

NPNEPITAXIALSILICONTRANSISTOR

文件:189.65 Kbytes Page:4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

NPNEPITAXIALSILICONDARLINGTONTRANSISTOR

文件:189.65 Kbytes Page:4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

NPNEPITAXIALSILICONDARLINGTONTRANSISTOR

文件:189.65 Kbytes Page:4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

NPNEPITAXIALSILICONTRANSISTOR

文件:189.65 Kbytes Page:4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

NPNEPITAXIALSILICONDARLINGTONTRANSISTOR

文件:189.65 Kbytes Page:4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

NPNEPITAXIALSILICONTRANSISTOR

文件:189.65 Kbytes Page:4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

NPNEPITAXIALSILICONTRANSISTOR

文件:189.65 Kbytes Page:4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

NPNEPITAXIALSILICONDARLINGTONTRANSISTOR

文件:189.65 Kbytes Page:4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

NPNEPITAXIALSILICONDARLINGTONTRANSISTOR

文件:189.65 Kbytes Page:4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

NPNEPITAXIALSILICONTRANSISTOR

文件:189.65 Kbytes Page:4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

NPNEPITAXIALSILICONDARLINGTONTRANSISTOR

文件:189.65 Kbytes Page:4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

NPNEPITAXIALSILICONTRANSISTOR

文件:189.65 Kbytes Page:4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

NPNEPITAXIALSILICONDARLINGTONTRANSISTOR

文件:189.65 Kbytes Page:4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

NPNEPITAXIALSILICONTRANSISTOR

文件:189.65 Kbytes Page:4 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

CustomerSpecification

Construction Diameters(In) 1)Component18X1COND a)Conductor22(26/36)AWGBareCopper0.027 b)Insulation0.010Wall,Nom.PVC,SemiRigid0.047 (1)Color(s) CondColorCondColorCondColor 1WHITE4YELLOW7BLUE 2BROWN5SLATE8RED 3GREEN6PINK 2)CableAssembly8Componen

ALPHAWIREAlpha Wire

阿尔法电线

ALPHAWIRE

CustomerSpecification

Construction Diameters(In) 1)Component18X1COND a)Conductor22(26/36)AWGBareCopper0.027 b)Insulation0.010Wall,Nom.PVC,SemiRigid0.047 (1)Color(s) CondColorCondColorCondColor 1WHITE4YELLOW7BLUE 2BROWN5SLATE8RED 3GREEN6PINK 2)CableAssembly8Componen

ALPHAWIREAlpha Wire

阿尔法电线

ALPHAWIRE

22x25mmStratum3OCXO

文件:63.66 Kbytes Page:3 Pages

CTSCTS Electronic Components

西迪斯西迪斯公司

CTS

TemperatureSensorsLineGuide

文件:736.09 Kbytes Page:11 Pages

HoneywellHoneywell Sensing and Productivity Solutions

霍尼韦尔霍尼韦尔国际

Honeywell

TIP112产品属性

  • 类型

    描述

  • 型号

    TIP112

  • 功能描述

    达林顿晶体管 NPN Power Darlington

  • RoHS

  • 制造商

    Texas Instruments

  • 配置

    Octal

  • 晶体管极性

    NPN 集电极—发射极最大电压

  • VCEO

    50 V 发射极 - 基极电压

  • VEBO

    集电极—基极电压

  • 最大直流电集电极电流

    0.5 A

  • 最大工作温度

    + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOIC-18

  • 封装

    Reel

更新时间:2024-4-25 18:18:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
23+
TOP220
4500
全新原装、诚信经营、公司现货销售!
ST
2020+
TO-220
6500
百分百原装正品 真实公司现货库存 本公司只做原装 可
ST(意法半导体)
23+
TO-220
942
原厂订货渠道,支持BOM配单一站式服务
ST
1318+
TO220
23568
优势现货可17%税
CJ/长电
22+
TO-220-3L
12800
本公司只做进口原装!优势低价出售!
Central Semiconductor Corp
23+
TO-220-3
30000
晶体管-分立半导体产品-原装正品
UTC
23/22+
TO220
6000
20年老代理.原厂技术支持
22+
NA
2742
加我QQ或微信咨询更多详细信息,
ST
23+
TO220
9526
ST
22+
TO-220
2987
只售原装自家现货!诚信经营!欢迎来电!

TIP112芯片相关品牌

  • ABRACON
  • AD
  • HAMMOND
  • ICST
  • MOLEX7
  • Motorola
  • NIC
  • Sipex
  • STMICROELECTRONICS
  • SUNMATE
  • Temic
  • TRACOPOWER

TIP112数据表相关新闻