Silicon NPN Transistor High Frequency Amplifier

Description: The NTE108 is a silicon NPN transistor in a TO92 type case designed for low–noise, high–frequency amplifiers, 1GHz local oscillatore, non–neutralized IF amplifiers, and non–saturating circuits with rise and fall times less than 2.5ns.

Bi-Polar transistor Selector Guide

Integrated Circuit TV Video Processor

Features: • For Reverse AGC • Sufficient Gain and Quieting Sensitivity • Stable Gain Over the Wide Band • Small Wave Distortion with AGC

Integrated Circuit Audio Power Amplifier, 4.8W

Integrated Circuit Audio Power Amplifier, 4.8W

Integrated Circuit FM IF Amplifier

Description: The NTE1082 is a silicon monolithic integrated circuit intended for usa as a three−stage FM IF amplifier having exceptionally high voltage gain and limiting characteristics. From pin 1 the stabilized voltage can be applied to the mixer stage.

Integrated Circuit Hybrid, Dual High Gain Pre−Amplifier

Integrated Circuit Hybrid, Dual High Gain Pre−Amplifier

Integrated Circuit Low Noise Audio Preamp

Features: • Low Noise: VNI = 0.8µVrms(Typ) • High Open Loop Voltage Gain: GVO = 92dB (Typ) • Low Distortion: THD = 0.1 (Max) at VOUT = 7Vrms, GV = 40dB, f= 1kHz

Integrated Circuit Low Noise Preamp

Description: • General–Purpose Pre–Amplifier • Voltage Amplifier Application • Low Noise • Operates from a Wide Range of Power Supplies • High Voltage Gain

Bi-Polar transistor Selector Guide

Integrated Circuit Audio Power Amplifier, 4.8W

200 VOLTS N-CHANNEL TMOS POWER FET LOGIC LEVEL

Logic Level TMOS N–Channel Enhancement Mode This TMOS FET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage display drivers. • Low Drive Requirement, VGS = 3

HIGH EFFICIENCY RECTIFIERS(1.0A,600-1000V)

Switchmode Power Rectifiers . . . Designed for use in switching power supplies. These state-of-the-art devices have the fllowing features: * High Surge Capacity * Low Power Loss, High efficiency. * Glass Passivated chip junctions * 150°C Operating Junction Temperature * Low Stored Charge

Operational Amplifiers

文件：158.28 Kbytes Page：8 Pages

Operational Amplifiers

文件：158.28 Kbytes Page：8 Pages

Operational Amplifiers

文件：158.28 Kbytes Page：8 Pages

BIPOLAR MONOLITHIC LINEAR INTEGRATED CIRCUIT