N-Channel Power MOSFET 100 V, 32 A, 37 m廓

Features • Low RDS(on) • High Current Capability • 100 Avalanche Tested • AEC Q101 Qualified − NVD6414AN • These Devices are Pb−Free and are RoHS Compliant

N-Channel Power MOSFET 100 V, 32 A, 37 m

Features • Low RDS(on) • High Current Capability • 100 Avalanche Tested • AEC Q101 Qualified − NVD6414AN • These Devices are Pb−Free and are RoHS Compliant

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 32A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 37mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

单 N 沟道，功率 MOSFET，100V，32A，37mΩ

N-Channel Power MOSFET

文件：107.64 Kbytes Page：7 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 32A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 37mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Power MOSFET 100 V, 32 A, 37 m廓

Features • Low RDS(on) • High Current Capability • 100 Avalanche Tested • AEC Q101 Qualified − NVD6414AN • These Devices are Pb−Free and are RoHS Compliant

N-Channel Power MOSFET 100 V, 32 A, 37 m

Features • Low RDS(on) • High Current Capability • 100 Avalanche Tested • AEC Q101 Qualified − NVD6414AN • These Devices are Pb−Free and are RoHS Compliant

N-Channel Power MOSFET 100 V, 32 A, 37 m廓

Features • Low RDS(on) • High Current Capability • 100 Avalanche Tested • AEC Q101 Qualified − NVD6414AN • These Devices are Pb−Free and are RoHS Compliant

N-channel Enhancement Mode Power MOSFET

Features  VDS= 100V, ID= 30 A RDS(ON)

N-Channel Power MOSFET

文件：107.64 Kbytes Page：7 Pages

N-Channel Power MOSFET

文件：107.64 Kbytes Page：7 Pages

N-Channel Power MOSFET

文件：107.64 Kbytes Page：7 Pages

0.56Ω On Resistance High Density Octal SPST Switch

FEATURES ► 0.56Ω typical on resistance ► High continuous current of up to 768mA ► Flat RON across signal range of 0.004Ω ► THD of −127dB at 1kHz ► Route through pins for digital signals and supplies ► Integrated passive components ► SPI with error detection ► Guaranteed break-before-make s

0.56Ω On Resistance High Density Octal SPST Switch

FEATURES ► 0.56Ω typical on resistance ► High continuous current of up to 768mA ► Flat RON across signal range of 0.004Ω ► THD of −127dB at 1kHz ► Route through pins for digital signals and supplies ► Integrated passive components ► SPI with error detection ► Guaranteed break-before-make s

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO6414 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It offers operation over a wide gate drive range from 2.5V to 12V. This device is suitable for use as a load switch. Standard product AO6414 is Pb-free (meets ROHS & Sony 259 speci

CUSTOMER PRODUCT SPECIFICATION

文件：72.66 Kbytes Page：1 Pages

30V N-Channel MOSFET

文件：273.85 Kbytes Page：6 Pages