isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.45Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFET 5 Amps, 60 Volts P?묬hannel DPAK

文件：92.59 Kbytes Page：8 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.45Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFET 5 Amps, 60 Volts P?묬hannel DPAK

文件：92.59 Kbytes Page：8 Pages

Power MOSFET 5 Amps, 60 Volts P−Channel DPAK

Power MOSFET 5 Amps, 60 Volts P?묬hannel DPAK

文件：92.59 Kbytes Page：8 Pages

P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS ‐60V RDSON (MAX.) 150mΩ ID ‐2.2A Pb‐Free Lead Plating & Halogen Free

P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS ‐60V RDSON (MAX.) 150mΩ ID ‐2.4A Pb‐Free Lead Plating & Halogen Free

TMOS POWER FET 5.0 AMPERES 60 VOLTS RDS(on) = 0.55 OHM

TMOS E-FET Power Field Effect Transistors DPAK for Surface Mount P–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery

High Power and current handing capability

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Power MOSFET 5 Amps, 60 Volts P?묬hannel DPAK

文件：92.59 Kbytes Page：8 Pages