isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.45Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFET 5 Amps, 60 Volts P?묬hannel DPAK

文件：92.59 Kbytes Page：8 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.45Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFET 5 Amps, 60 Volts P?묬hannel DPAK

文件：92.59 Kbytes Page：8 Pages

Power MOSFET 5 Amps, 60 Volts P−Channel DPAK

Power MOSFET 5 Amps, 60 Volts P?묬hannel DPAK

文件：92.59 Kbytes Page：8 Pages

TMOS POWER FET 5.0 AMPERES 60 VOLTS RDS(on) = 0.55 OHM

TMOS E-FET Power Field Effect Transistors DPAK for Surface Mount P–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery

TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHM

TMOS V Power Field Effect Transistor DPAK for Surface Mount P–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 6

TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHM

TMOS V Power Field Effect Transistor P–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Ju

Power MOSFET 5 Amps, 60 Volts P?묬hannel DPAK

文件：92.59 Kbytes Page：8 Pages