TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHM

TMOS V Power Field Effect Transistor DPAK for Surface Mount P–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 6

功率 MOSFET，-60V，-5A，450mΩ，单 P 沟道，DPAK

此功率 MOSFET 适用于承受雪崩和换相模式下的高能量。此类器件针对电源、转换器和电源电机控制中的低压、高速开关应用而设计，尤其适用于二极管速度和换相安全运行区域非常关键的桥式电路，可针对非预期的瞬时电压提供附加安全裕度。 • Avalanche Energy Specified\n• IDSS and VDS(on) Specified at Elevated Temperature\n• Pb-Free Package is Available;

TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHM

Power MOSFET 5 Amps, 60 Volts P?묬hannel DPAK

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Power MOSFET 5 Amps, 60 Volts P?묬hannel DPAK

文件：92.59 Kbytes Page：8 Pages

P-Channel 60-V (D-S) MOSFET

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TMOS POWER FET 5.0 AMPERES 60 VOLTS RDS(on) = 0.55 OHM

TMOS E-FET Power Field Effect Transistors DPAK for Surface Mount P–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery

TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHM

TMOS V Power Field Effect Transistor P–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Ju

Power MOSFET 5 Amps, 60 Volts P?묬hannel DPAK

文件：92.59 Kbytes Page：8 Pages