TMOS POWER FET 5.0 AMPERES 60 VOLTS RDS(on) = 0.55 OHM

TMOS E-FET Power Field Effect Transistors DPAK for Surface Mount P–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery

TMOS POWER FET 5.0 AMPERES 60 VOLTS RDS(on) = 0.55 OHM

Power MOSFET 5 Amps, 60 Volts P?묬hannel DPAK

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P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS ‐60V RDSON (MAX.) 150mΩ ID ‐2.2A Pb‐Free Lead Plating & Halogen Free

P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS ‐60V RDSON (MAX.) 150mΩ ID ‐2.4A Pb‐Free Lead Plating & Halogen Free

High Power and current handing capability

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