isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 54A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 54A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel Advanced Mode Power MOSFET

Features VDS= 40V, ID= 150A RDS(ON)

Power MOSFET 30 V, 54 A, Single N?묬hannel, DPAK/IPAK

文件：148.87 Kbytes Page：8 Pages

Power MOSFET 30 V, 54 A, Single N?묬hannel, DPAK/IPAK

文件：148.87 Kbytes Page：8 Pages

N-Channel 30-V (D-S) MOSFET

文件：995.68 Kbytes Page：7 Pages

N-Channel 30-V (D-S) MOSFET

文件：995.68 Kbytes Page：7 Pages

Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK

Power MOSFET 30 V, 54 A, Single N?묬hannel, DPAK/IPAK

文件：148.87 Kbytes Page：8 Pages

MOSFET N-CH 30V 54A SGL IPAK

MOSFET N-CH 30V 54A SGL DPAK

N-Channel 30-V (D-S) MOSFET

文件：1.01783 Mbytes Page：8 Pages

Power MOSFET 30 V, 54 A, Single N?묬hannel, DPAK/IPAK

文件：148.87 Kbytes Page：8 Pages

Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

General Description The AO4906 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous

Dual N-Channel MOSFET

■ Features N-Channel 1 ● VDS (V) = 30V ● ID = 8.5 A (VGS = 10V) ● RDS(ON)

Dual N-Channel 60 V (D-S) 175 째C MOSFET

文件：1.09623 Mbytes Page：9 Pages

Adjustable RF Inductors

文件：29.55 Kbytes Page：1 Pages

Adjustable RF Inductors

文件：29.55 Kbytes Page：1 Pages