Power MOSFET 30 V, 76 A, Single N--Channel, DPAK/IPAK

Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable − NVD4806N • These Devices are Pb−Free and are RoHS

30 V, 76 A, Single N?묬hannel, DPAK/IPAK

Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable − NVD4806N • These Devices are Pb−Free and are RoHS

Power MOSFET 30 V, 76 A, Single N?묬hannel, DPAK/IPAK

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable − NVD4806N • These Devices are Pb−Free and are RoHS Compliant Applications • CPU Power Delivery • DC

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 79A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel MOSFET uses advanced trench technology

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功率 MOSFET 30V 76A 6 mΩ 单 N 沟道 DPAK

Power MOSFET 30 V, 76 A, Single N?묬hannel, DPAK/IPAK

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable − NVD4806N • These Devices are Pb−Free and are RoHS Compliant Applications • CPU Power Delivery • DC

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 79A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFET 30 V, 76 A, Single N--Channel, DPAK/IPAK

Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable − NVD4806N • These Devices are Pb−Free and are RoHS

Power MOSFET 30 V, 76 A, Single N--Channel, DPAK/IPAK

Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable − NVD4806N • These Devices are Pb−Free and are RoHS

Power MOSFET 30 V, 76 A, Single N?묬hannel, DPAK/IPAK

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable − NVD4806N • These Devices are Pb−Free and are RoHS Compliant Applications • CPU Power Delivery • DC

Power MOSFET 30 V, 76 A, Single N--Channel, DPAK/IPAK

Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable − NVD4806N • These Devices are Pb−Free and are RoHS

Power MOSFET 30 V, 76 A, Single N?묬hannel, DPAK/IPAK

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable − NVD4806N • These Devices are Pb−Free and are RoHS Compliant Applications • CPU Power Delivery • DC

N-Channel 30-V (D-S) MOSFET

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N-Channel 30-V (D-S) MOSFET

文件：995.69 Kbytes Page：7 Pages

STANDARD SERIES

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HIGH POWER SERIES

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HIGH TEMPERATURE SERIES

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BUILT-IN SERVO DRIVE INTEGRATED MOTOR-Brushless

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BUILT-IN SERVO DRIVE INTEGRATED MOTOR-Brushless

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