MOSFET – Power, Single, N-Channel, DPAK/IPAK 30 V, 88 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 95A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

单 N 沟道，功率 MOSFET，30V，88A，5mΩ

Power MOSFET 30 V, 88 A, Single N?묬hannel, DPAK/IPAK

文件：80.75 Kbytes Page：8 Pages

MOSFET – Power, Single, N-Channel, DPAK/IPAK 30 V, 88 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 95A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 5.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

MOSFET – Power, Single, N-Channel, DPAK/IPAK 30 V, 88 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

MOSFET – Power, Single, N-Channel, DPAK/IPAK 30 V, 88 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

N-channel Enhancement Mode Power MOSFET

Features  VDS= 30V, ID= 150A RDS(ON)

Power MOSFET

文件：122.57 Kbytes Page：8 Pages

Power MOSFET

文件：122.57 Kbytes Page：8 Pages

N-Channel 30-V (D-S) MOSFET

文件：995.69 Kbytes Page：7 Pages

Power MOSFET 30 V, 88 A, Single N?묬hannel, DPAK/IPAK

文件：80.75 Kbytes Page：8 Pages

Power MOSFET 30 V, 88 A, Single N?묬hannel, DPAK/IPAK

文件：80.75 Kbytes Page：8 Pages

N-Channel 30-V (D-S) MOSFET

文件：995.68 Kbytes Page：7 Pages

Power MOSFET 30 V, 88 A, Single N?묬hannel, DPAK/IPAK

文件：80.75 Kbytes Page：8 Pages

Power MOSFET

文件：122.57 Kbytes Page：8 Pages

N-Channel 30-V (D-S) MOSFET

文件：1.00247 Mbytes Page：7 Pages

P-Channel Enhancement Mode Power MOSFET

Description The 4805 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features VDS = -30V,ID = - 8.0A RDS(ON)typ 17mΩ @ VGS= -10V

Ultra Precision Bulk Metal Film Resistors

文件：132.97 Kbytes Page：2 Pages

Ideal resistor for precision instrumentation

文件：410.61 Kbytes Page：3 Pages

Metal Film Resistors Metal Film Resistors

文件：425.84 Kbytes Page：3 Pages

Graphite Brush

文件：1.63144 Mbytes Page：1 Pages