Power MOSFET 30 V, 117 A, Single N--Channel, DPAK/IPAK

MOSFET – Power, Single, N-Channel, DPAK/IPAK 30 V, 117 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC Q101 Qualified − NVD4804N • These Devices are Pb−Free and are RoHS Compliant A

Power MOSFET 30 V, 117 A, Single N?묬hannel, DPAK/IPAK

Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC Q101 Qualified − NVD4804N • These Devices are Pb−Free and are RoHS Compliant App

30V N-Channel MOSFET

• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free and are RoHS Compliant • CPU Power Delivery • DC−DC Converters • Low Side Switching Description VDS (V) = 30V I

30V N-Channel MOSFET

Description • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free and are RoHS Compliant • CPU Power Delivery • DC−DC Converters • Low Side Switching Features VDS (V

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 124A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 124A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFET 30 V, 117 A, Single N--Channel, DPAK/IPAK

MOSFET – Power, Single, N-Channel, DPAK/IPAK 30 V, 117 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC Q101 Qualified − NVD4804N • These Devices are Pb−Free and are RoHS Compliant A

Power MOSFET 30 V, 117 A, Single N--Channel, DPAK/IPAK

MOSFET – Power, Single, N-Channel, DPAK/IPAK 30 V, 117 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC Q101 Qualified − NVD4804N • These Devices are Pb−Free and are RoHS Compliant A

Power MOSFET 30 V, 117 A, Single N--Channel, DPAK/IPAK

MOSFET – Power, Single, N-Channel, DPAK/IPAK 30 V, 117 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC Q101 Qualified − NVD4804N • These Devices are Pb−Free and are RoHS Compliant A

Power MOSFET 30 V, 117 A, Single N?묬hannel, DPAK/IPAK

Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC Q101 Qualified − NVD4804N • These Devices are Pb−Free and are RoHS Compliant App

30V N-Channel MOSFET

• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free and are RoHS Compliant • CPU Power Delivery • DC−DC Converters • Low Side Switching Description VDS (V) = 30V I

N-channel Enhancement Mode Power MOSFET

Features  VDS= 30V, ID= 150A RDS(ON)

30V N-Channel MOSFET

Description • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free and are RoHS Compliant • CPU Power Delivery • DC−DC Converters • Low Side Switching Features VDS (V

Power MOSFET

文件：95.35 Kbytes Page：8 Pages

单 N 沟道，功率 MOSFET，30V，117A，4mΩ

Power MOSFET

文件：95.35 Kbytes Page：8 Pages

N-Channel 30-V (D-S) MOSFET

文件：995.7 Kbytes Page：7 Pages

N-Channel 30-V (D-S) MOSFET

文件：995.7 Kbytes Page：7 Pages

Power MOSFET

文件：95.35 Kbytes Page：8 Pages

Power MOSFET

文件：95.35 Kbytes Page：8 Pages

N-Channel 30-V (D-S) MOSFET

文件：1.00247 Mbytes Page：7 Pages

Ideal resistor for precision instrumentation

文件：410.61 Kbytes Page：3 Pages

Metal Film Resistors Metal Film Resistors

文件：425.84 Kbytes Page：3 Pages

Ultra Precision Bulk Metal Film Resistors

文件：132.97 Kbytes Page：2 Pages

Assembly Instructions

文件：26.62 Kbytes Page：2 Pages

METAL BRUSH

文件：136.91 Kbytes Page：1 Pages