Power MOSFET 30 V, 117 A, Single N--Channel, DPAK/IPAK

MOSFET – Power, Single, N-Channel, DPAK/IPAK 30 V, 117 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC Q101 Qualified − NVD4804N • These Devices are Pb−Free and are RoHS Compliant A

Power MOSFET 30 V, 117 A, Single N?묬hannel, DPAK/IPAK

Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC Q101 Qualified − NVD4804N • These Devices are Pb−Free and are RoHS Compliant App

30V N-Channel MOSFET

• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free and are RoHS Compliant • CPU Power Delivery • DC−DC Converters • Low Side Switching Description VDS (V) = 30V I

N-channel Enhancement Mode Power MOSFET

Features  VDS= 30V, ID= 150A RDS(ON)

30V N-Channel MOSFET

Description • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free and are RoHS Compliant • CPU Power Delivery • DC−DC Converters • Low Side Switching Features VDS (V

Power MOSFET

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N-Channel 30-V (D-S) MOSFET

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