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NTD25价格

参考价格:¥1.8095

型号:NTD25P03LT4G 品牌:ON 备注:这里有NTD25多少钱,2026年最近7天走势,今日出价,今日竞价,NTD25批发/采购报价,NTD25行情走势销售排行榜,NTD25报价。
型号 功能描述 生产厂家 企业 LOGO 操作
NTD25

HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS

文件:35 Kbytes Page:2 Pages

EDI

Power MOSFET, N-Channel, SUPERFET® III, FAST, 650 V, 13 A, 250 mΩ, DPAK

SUPERFET III MOSFET is ON Semiconductor’s brand-new high\nvoltage super-junction (SJ) MOSFET family that is utilizing charge\nbalance technology for outstanding low on-resistance and lower gate\ncharge performance. This advanced technology is tailored to minimize\nconduction loss, provides superior • 700 V @ TJ = 150°C\n• Higher system reliability at low temperature operation\n• Ultra Low Gate Charge (Typ. Qg = 24 nC)\n• Low switching loss\n• Low Effective Output Capacitance (Typ. Coss(eff.) = 229 pF)\n• Low switching loss\n• Fast switching performance with robust body diode\n• Low switching l;

ONSEMI

安森美半导体

P-Channel -30V (D-S) MOSFET

PRODUCT SUMMARY VDS (V) = -30V RDS(ON)

EVVOSEMI

翊欧

单 P 沟道,逻辑电平,MOSFET,-30V,-25A,72mΩ

Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes.The source-to-drain diode recovery time is comparable to a discrete fast recovery diode. • RoHS Compliant;

ONSEMI

安森美半导体

MOSFET – Power, P-Channel, Logic Level, DPAK -25 A, -30 V

Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The sourceïtoïdrain diode recovery time is comparable to a discrete fast recovery diode. Features • S Prefix for Automotive and Other Applications Requiring Uniqu

ONSEMI

安森美半导体

MOSFET – Power, P-Channel, Logic Level, DPAK -25 A, -30 V

Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The sourceïtoïdrain diode recovery time is comparable to a discrete fast recovery diode. Features • S Prefix for Automotive and Other Applications Requiring Uniqu

ONSEMI

安森美半导体

丝印代码:25P03L;P-Channel -30V (D-S) MOSFET

PRODUCT SUMMARY VDS (V) = -30V RDS(ON)

EVVOSEMI

翊欧

P-channel Enhancement Mode Power MOSFET

Features  VDS= -30V, ID= -20A RDS(ON)

BYCHIP

百域芯

MOSFET – Power, P-Channel, Logic Level, DPAK -25 A, -30 V

Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. The sourceïtoïdrain diode recovery time is comparable to a discrete fast recovery diode. Features • S Prefix for Automotive and Other Applications Requiring Uniqu

ONSEMI

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Thyristor-Diode Module, 250 Amps

文件:211.51 Kbytes Page:3 Pages

NAINA

丝印代码:T250N65S3H;MOSFET - Power, N?륝hannel, SUPERFET III, FAST 650 V, 250 m, 13 A

文件:353.83 Kbytes Page:11 Pages

ONSEMI

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Power MOSFET

文件:74.3 Kbytes Page:10 Pages

ONSEMI

安森美半导体

Power MOSFET

ONSEMI

安森美半导体

Power MOSFET

文件:74.3 Kbytes Page:10 Pages

ONSEMI

安森美半导体

Power MOSFET -25 Amp, -30 Volt

文件:160.39 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:117.9 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET -25 Amp, -30 Volt

文件:160.39 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:117.9 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Power MOSFET -25 Amp, -30 Volt

文件:160.39 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:74.3 Kbytes Page:10 Pages

ONSEMI

安森美半导体

Power MOSFET -25 Amp, -30 Volt

文件:160.39 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:74.3 Kbytes Page:10 Pages

ONSEMI

安森美半导体

Power MOSFET -25 Amp, -30 Volt

文件:160.39 Kbytes Page:9 Pages

ONSEMI

安森美半导体

P-Channel 30-V (D-S) MOSFET

文件:1.01486 Mbytes Page:9 Pages

VBSEMI

微碧半导体

Power MOSFET -25 Amp, -30 Volt

文件:160.39 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Power MOSFET -25 Amp, -30 Volt

文件:160.39 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:74.3 Kbytes Page:10 Pages

ONSEMI

安森美半导体

Power MOSFET -25 Amp, -30 Volt

文件:160.39 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Power MOSFET -25 Amp, -30 Volt

文件:160.39 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:117.9 Kbytes Page:8 Pages

ONSEMI

安森美半导体

P-Channel 30-V (D-S) MOSFET

文件:1.0148 Mbytes Page:9 Pages

VBSEMI

微碧半导体

P-Channel 60 V (D-S) MOSFET

文件:1.00377 Mbytes Page:8 Pages

VBSEMI

微碧半导体

NTD25产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • Halide free:

    H

  • Status:

    Active

  • Channel Polarity:

    P-Channel

  • Configuration:

    Single

  • V(BR)DSS Min (V):

    -30

  • VGS Max (V):

    15

  • VGS(th) Max (V):

    -2

  • ID Max (A):

    -25

  • PD Max (W):

    75

  • RDS(on) Max @ VGS = 4.5 V(mΩ):

    85

  • Qg Typ @ VGS = 4.5 V (nC):

    23.6

  • Qg Typ @ VGS = 10 V (nC):

    75

  • Ciss Typ (pF):

    900

  • Package Type:

    DPAK-3

更新时间:2026-5-13 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
24+
标准封装
13048
全新原装正品/价格优惠/质量保障
ONSEMI/安森美
25+
TO-252
20300
ONSEMI/安森美原装特价NTD25P03LT4G即刻询购立享优惠#长期有货
ON
21+
TO-252
2500
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ONSEMI/安森美
24+
6000
原装认证/挂了就有现货的
ON(安森美)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ON(安森美)
23+
25900
新到现货,只有原装
ON(安森美)
25+
TO-252-2(DPAK)
22412
原装正品现货,原厂订货,可支持含税原型号开票。
ON/安森美
21+
SOT-252
30000
优势供应 实单必成 可13点增值税
ON
25+23+
TO251
73840
绝对原装正品现货,全新深圳原装进口现货
ONSEMI/安森美
25+
60000
原装认证/挂了就有现货的/来问吧

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