TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS RDS(on) = 175 MOHM

HDTMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to with stand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–so

P-Channel 60-V (D-S) MOSFET

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TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS RDS(on) = 175 MOHM

HDTMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to with stand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–so

P?묬hannel DPAK Power MOSFET

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P?묬hannel DPAK Power MOSFET

文件：91.91 Kbytes Page：8 Pages

P?묬hannel DPAK Power MOSFET

文件：91.91 Kbytes Page：8 Pages

P-Channel 60-V (D-S) MOSFET

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P-Channel Enhancement Mode Field Effect Transistor

FEATURES -60V, -14A, RDS(ON) =125mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) =175mW @VGS = -4.5V. Lead free product is acquired.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -60V, -15A, RDS(ON) =105mΩ @VGS = -10V. RDS(ON) =150mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -60V, -13A, RDS(ON) = 105mΩ @VGS = -10V. RDS(ON) = 150mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

P-Channel 60-V (D-S) MOSFET

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P-Channel Enhancement Mode Field Effect Transistor

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