位置：首页 > IC中文资料 > NTD20P06HD
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NTD20P06HD | P-Channel 60-V (D-S) MOSFET 文件：987.97 Kbytes Page：8 Pages | VBSEMI 微碧半导体 |   | |
P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -14A, RDS(ON) =125mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RDS(ON) =175mW @VGS = -4.5V. Lead free product is acquired. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES ■ -60V, -15A, RDS(ON) =105mΩ @VGS = -10V. RDS(ON) =150mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. | CET 华瑞 | | ||
P-Channel Enhancement Mode Field Effect Transistor FEATURES ■ -60V, -13A, RDS(ON) = 105mΩ @VGS = -10V. RDS(ON) = 150mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package. | CET 华瑞 | | ||
P-Channel 60-V (D-S) MOSFET 文件：988.36 Kbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
P-Channel Enhancement Mode Field Effect Transistor 文件：441.65 Kbytes Page：4 Pages | CET 华瑞 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
NA/ |
2500 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ON |
24+ |
TO-252 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
ON |
25+23+ |
TO252 |
75967 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
ON/安森美 |
25+ |
TO252 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
ON/安森美 |
24+ |
TO252 |
990000 |
明嘉莱只做原装正品现货 |
|||
O |
22+ |
TO-252 |
25000 |
只做原装进口现货,专注配单 |
|||
ON/安森美 |
23+ |
TO-252 |
5200 |
原厂原装 |
|||
ON |
0344+ |
TO-252 |
1850 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON |
2023+ |
TO-252 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
O |
22+ |
TO-252 |
6000 |
十年配单,只做原装 |
NTD20P06HD规格书下载地址
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DdatasheetPDF页码索引
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