丝印代码：20P06；P-Channel Enhancement Mode MOSFET

Features * Vos =-60V,lo =-16A Ros 52mQ @ Vos=-10V (Typ)

MOS管

P-Channel 60-V (D-S) MOSFET

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TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS RDS(on) = 175 MOHM

HDTMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to with stand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–so

TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS RDS(on) = 175 MOHM

HDTMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to with stand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–so

Single Phase 20.0 AMPS. Glass Passivated Bridge Rectifiers

FEATURES - Glass passivated junction - Ideal for printed circuit board - Typical IR less than 0.1μA - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 defini

Power MOSFET ??0 V, ??5.5 A, Single P?묬hannel, DPAK

文件：119.94 Kbytes Page：7 Pages

丝印代码：T20P06LG；Power MOSFET ??0 V, ??5.5 A, Single P?묬hannel, DPAK

文件：119.94 Kbytes Page：7 Pages