位置：首页 > IC中文资料 > NTBG160N120SC1_V01
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NTBG160N120SC1_V01 | Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, D2PAK-7L Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (typ. QG(tot) = 33.8 nC) • Low Effective Output Capacitance (typ. Coss = 50.7 pF) • 100 Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) | ONSEMI 安森美半导体 |   | |
Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, TO-247-3L Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (QG(tot) = 34 nC) • Low Effective Output Capacitance (Coss = 50 pF) • 100 UIL Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications • UPS • DC− | ONSEMI 安森美半导体 | | ||
Silicon Carbide (SiC) MOSFET – 160 mohm, 1200V, M1, D2PAK-7L Features • Typ. RDS(on) = 160 m • Ultra Low Gate Charge (typ. QG(tot) = 33.8 nC) • Low Effective Output Capacitance (typ. Coss = 50.7 pF) • 100 Avalanche Tested • AEC−Q101 Qualified and PPAP Capable • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second l | ONSEMI 安森美半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Onsemi |
22+ |
TO263 |
9600 |
安森美现货库存,终端可送样 |
|||
ON |
22+ |
NA |
760 |
原装正品支持实单 |
|||
ON/安森美 |
22+ |
TO-263 |
9000 |
原装正品,支持实单! |
|||
ON |
24+ |
TO-263 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
Onsemi |
22+ |
TO263 |
25000 |
专业配单,原装正品假一罚十,代理渠道价格优 |
|||
ON(安森美) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
onsemi(安森美) |
24+ |
TO2637 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
ON(安森美) |
2447 |
D2PAK-7 |
105000 |
800个/圆盘一级代理专营品牌!原装正品,优势现货,长 |
|||
ON(安森美) |
2511 |
TO-263 |
5904 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
ON |
两年内 |
NA |
769 |
实单价格可谈 |
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DdatasheetPDF页码索引
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