Dual N-Channel 100V Specified PowerTrench MOSFET

General Description These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been desig

T-13/4 (5 mm), T-1 (3 mm), 5 Volt, 12 Volt, Integrated Resistor LED Lamps

Description The 5 volt and 12 volt series lamps contain an integral current limiting resistor in series with the LED. This allows the lamp to be driven from a 5 volt/12 volt source without an external current limiter. The red LEDs are made from GaAsP on a GaAs substrate. The High Efficiency Red a

Low voltage dual-band RF front-end

DESCRIPTION The SA3601 is an integrated dual-band RF front-end that operates at both cellular (AMPS and TDMA) and PCS (TDMA) frequencies, and is designed in a 20 GHz fT BiCMOS process—QUBiC2. The low-band (LB) receiver is a combined low-noise amplifier (LNA) and mixer. The LNA has a 1.7 dB noise

Multiple output voltage regulators

文件：84.68 Kbytes Page：12 Pages

Multiple output voltage regulators

文件：84.68 Kbytes Page：12 Pages