General Description

These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

Features

• 1.0 A, 100 V. RDS(ON)= 500 mΩ @ VGS = 10 V RDS(ON)= 550 mΩ @ VGS = 6.0 V

• Low gate charge (3.7nC typical)

• Fast switching speed.

• High performance trench technology for extremely low R DS(ON) .

• SuperSOTTM-6 package: small footprint 72 (smaller than standard SO-8); low profile (1mm thick).

Applications

• Load switch

• Battery protection

• Power management