Dual N-Channel 100V Specified PowerTrench MOSFET

General Description These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been desig

双 N 沟道，100V 指定 PowerTrench® MOSFET，1.0A，500mΩ

这些N沟道100V额定MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持低栅极电荷以获得卓越开关性能而定制的。 这些器件经过专门设计，能在极小的空间内实现优异的功率耗散，非常适合那些不宜采用更大更昂贵的SO-8和TSSOP-8封装的应用。 •1.0 A，100 V\n•RDS(on) = 500 mΩ@ VGS = 10 V\n•RDS(on) = 550 mΩ @ VGS = -6V\n•低栅极电荷（3.7nC，典型值）\n•快速开关速度\n•高性能沟道技术可实现极低的RDS(ON)\n•SuperSOT™-6封装： 小尺寸（比标准SO-8封装小72%）；薄型（1mm厚）;

丝印代码：601；100V Dual N-Channel Enhancement Mode MOSFET

Application - Power switch - DC/DC converters

T-13/4 (5 mm), T-1 (3 mm), 5 Volt, 12 Volt, Integrated Resistor LED Lamps

Description The 5 volt and 12 volt series lamps contain an integral current limiting resistor in series with the LED. This allows the lamp to be driven from a 5 volt/12 volt source without an external current limiter. The red LEDs are made from GaAsP on a GaAs substrate. The High Efficiency Red a

Low voltage dual-band RF front-end

DESCRIPTION The SA3601 is an integrated dual-band RF front-end that operates at both cellular (AMPS and TDMA) and PCS (TDMA) frequencies, and is designed in a 20 GHz fT BiCMOS process—QUBiC2. The low-band (LB) receiver is a combined low-noise amplifier (LNA) and mixer. The LNA has a 1.7 dB noise

Multiple output voltage regulators

文件：84.68 Kbytes Page：12 Pages

Multiple output voltage regulators

文件：84.68 Kbytes Page：12 Pages