Low voltage dual-band RF front-end

DESCRIPTION The SA3601 is an integrated dual-band RF front-end that operates at both cellular (AMPS and TDMA) and PCS (TDMA) frequencies, and is designed in a 20 GHz fT BiCMOS process—QUBiC2. The low-band (LB) receiver is a combined low-noise amplifier (LNA) and mixer. The LNA has a 1.7 dB noise

eMMC Controller

衡宇科技eMMC/eMCP控制芯片为全球第二家支持TLC之eMMC/eMCP控制芯片，已陆续通过全球各主流手机及平板计算机之验证，列入官方建议采购名单。\n提供高效能、低功率、具成本效益与附加价值之解决方案。支持市面上六大家闪存,包含三星(Samsung)、铠侠(KIOXIA)、新帝(SanDisk)、海力士(SKhynix)、美光(Micron)与英特尔(Intel)之MLC及TLC闪存。 　\n衡宇科技之控制芯片皆通过严苛的条件与环境测试，提供客户兼具可靠性、兼容性与优越读写效能之最佳选择。 >使用32位 CPU，有效提高性能，降低功耗\n>拥有快速的BCH 侦错引擎，提升Flash读写可靠度\n>优良的瞬间断电回复 (SPOR) 功能，确保数据完整\n>卓越的 Wear leveling与WAI，延展NAND Flash 寿命;

Dual N-Channel 100V Specified PowerTrench MOSFET

General Description These N-Channel 100V specified MOSFETs are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been desig

T-13/4 (5 mm), T-1 (3 mm), 5 Volt, 12 Volt, Integrated Resistor LED Lamps

Description The 5 volt and 12 volt series lamps contain an integral current limiting resistor in series with the LED. This allows the lamp to be driven from a 5 volt/12 volt source without an external current limiter. The red LEDs are made from GaAsP on a GaAs substrate. The High Efficiency Red a

Multiple output voltage regulators

文件：84.68 Kbytes Page：12 Pages

Multiple output voltage regulators

文件：84.68 Kbytes Page：12 Pages