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NRVBS360价格
参考价格：￥1.8172
型号：NRVBS360BT3G 品牌：ON SEMICONDUCTOR 备注：这里有NRVBS360多少钱，2026年最近7天走势，今日出价，今日竞价，NRVBS360批发/采购报价，NRVBS360行情走势销售排行榜，NRVBS360报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NRVBS360 | Schottky Power Rectifier, Surface Mount, 3.0 A, 60 V | ONSEMI 安森美半导体 |   | |
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol | ONSEMI 安森美半导体 | | ||
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol | ONSEMI 安森美半导体 | | ||
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol | ONSEMI 安森美半导体 | | ||
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol | ONSEMI 安森美半导体 | | ||
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol | ONSEMI 安森美半导体 | | ||
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol | ONSEMI 安森美半导体 | | ||
SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, hi | ONSEMI 安森美半导体 | | ||
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol | ONSEMI 安森美半导体 | | ||
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol | ONSEMI 安森美半导体 | | ||
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol | ONSEMI 安森美半导体 | | ||
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol | ONSEMI 安森美半导体 | | ||
SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, hi | ONSEMI 安森美半导体 | | ||
Surface Mount Schottky Power Rectifier 文件：117.32 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：DO-214AA，SMB 包装：散装 描述：DIODE SCHOTTKY 60V 3A SMB 分立半导体产品 二极管 - 整流器 - 单 | ONSEMI 安森美半导体 | | ||
SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS | ONSEMI 安森美半导体 | | ||
封装/外壳：DO-214AA，SMB 包装：卷带（TR） 描述：DIODE SCHOTTKY 60V 4A SMB 分立半导体产品 二极管 - 整流器 - 单 | ONSEMI 安森美半导体 | | ||
Surface Mount Schottky Power Rectifier 文件：117.32 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
肖特基二极管 | ONSEMI 安森美半导体 | | ||
Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, hi | MOTOROLA 摩托罗拉 | | ||
SWITCHMODE??Power Rectifirers DPAK Surface Mount Package SWITCHMODE Power Rectifiers DPAK Surface Mount Package . . . designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. These state–of–the–art devices have the following features: • Extremel | MOTOROLA 摩托罗拉 | | ||
HIGH SPEED DIFFRENTIAL COMPARATOR 文件：186.85 Kbytes Page：5 Pages | NJRC 日本无线 | | ||
HIGH SPEED DIFFRENTIAL COMPARATOR 文件：186.85 Kbytes Page：5 Pages | NJRC 日本无线 | | ||
HIGH SPEED DIFFRENTIAL COMPARATOR 文件：186.85 Kbytes Page：5 Pages | NJRC 日本无线 | |
NRVBS360产品属性
- 类型
描述
- 型号
NRVBS360
- 制造商
ON Semiconductor
- 功能描述
Diode Schottky 60V 4A SMB
- 制造商
ON Semiconductor
- 功能描述
3A 60V SCHOTTKY SMB - Tape and Reel
- 制造商
ON Semiconductor
- 功能描述
Diode Schottky 60V 4A 2-Pin SMB T/R
- 制造商
ON Semiconductor
- 功能描述
REEL/3A 60V SCHOTTKY SMB
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi |
25+ |
SMB |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
ON(安森美) |
25+ |
标准封装 |
8000 |
原装，请咨询 |
|||
ON(安森美) |
26+ |
NA |
60000 |
只有原装 可配单 |
|||
ON |
24+ |
SMB |
15000 |
原装原标原盒 给价就出 全网最低 |
|||
ONSEMI/安森美 |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
ON(安森美) |
24+ |
DO-214AA,SMB |
16860 |
原装正品现货支持实单 |
|||
ON/安森美 |
25+ |
DO-214AA |
10000 |
原装现货假一罚十 |
|||
ONSemiconductor |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
24+ |
N/A |
67000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
ON |
23+ |
NA |
6800 |
原装正品,力挺实单 |
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NRVBS360规格书下载地址
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NRVBS360数据表相关新闻
NRVBS360BNT3G
进口代理
2023-4-21NRVBSS24T3G
NRVBSS24T3G
2023-3-30NRVHP120SFT3G
二极管 标准 200 V 1A 表面贴装型 SOD-123FL
2022-10-19NRVB1H100SFT3G
原装正品现货
2022-5-27NRVBA130LNT3G
联系人张生 电话19926428992 QQ1924037095
2021-10-12NRVBA130LNT3G
参数 参数值 包装 标准卷带 系列 汽车级，AEC-Q101 零件状态 有源 二极管类型 肖特基 电压 - DC 反向（Vr）（最大值） 30V 电流 - 平均整流（Io） 1A 不同 If 时的电压 - 正向（Vf 410mV @ 1A 速度 快速恢复 = 200mA（Io） 反向恢复时间（trr） 快速恢复 = 200mA（Io） 不同Vr 时的电流 - 反向漏电流 1
2021-10-12
DdatasheetPDF页码索引
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