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NRVBS360BT3G价格
参考价格：￥1.8172
型号：NRVBS360BT3G 品牌：ON SEMICONDUCTOR 备注：这里有NRVBS360BT3G多少钱，2025年最近7天走势，今日出价，今日竞价，NRVBS360BT3G批发/采购报价，NRVBS360BT3G行情走势销售排行榜，NRVBS360BT3G报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NRVBS360BT3G | SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, hi | ONSEMI 安森美半导体 |   | |
NRVBS360BT3G | Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol | ONSEMI 安森美半导体 | | |
NRVBS360BT3G | Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol | ONSEMI 安森美半导体 | | |
NRVBS360BT3G | Surface Mount Schottky Power Rectifier 文件：117.32 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | |
NRVBS360BT3G | 封装/外壳：DO-214AA，SMB 包装：散装 描述：DIODE SCHOTTKY 60V 3A SMB 分立半导体产品 二极管 - 整流器 - 单 | ONSEMI 安森美半导体 | | |
NRVBS360BT3G | SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS | ONSEMI 安森美半导体 | | |
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol | ONSEMI 安森美半导体 | | ||
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol | ONSEMI 安森美半导体 | | ||
封装/外壳：DO-214AA，SMB 包装：卷带（TR） 描述：DIODE SCHOTTKY 60V 4A SMB 分立半导体产品 二极管 - 整流器 - 单 | ONSEMI 安森美半导体 | | ||
SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, hi | ONSEMI 安森美半导体 | | ||
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol | ONSEMI 安森美半导体 | | ||
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol | ONSEMI 安森美半导体 | | ||
Surface Mount Schottky Power Rectifier 文件：117.32 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
Surface Mount Ultrafast Power Rectifiers 文件：98.32 Kbytes Page：5 Pages | ONSEMI 安森美半导体 | |
NRVBS360BT3G产品属性
- 类型
描述
- 型号
NRVBS360BT3G
- 制造商
ON Semiconductor
- 功能描述
Diode Schottky 60V 4A SMB
- 制造商
ON Semiconductor
- 功能描述
3A 60V SCHOTTKY SMB - Tape and Reel
- 制造商
ON Semiconductor
- 功能描述
Diode Schottky 60V 4A 2-Pin SMB T/R
- 制造商
ON Semiconductor
- 功能描述
REEL/3A 60V SCHOTTKY SMB
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
SMB |
38024 |
原装正品,现货库存,1小时内发货 |
|||
ON(安森美) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
ON |
24+ |
DO-214A |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
ON |
1546 |
SMC |
30 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ONSEMI/安森美 |
25+ |
SMB |
32360 |
ONSEMI/安森美全新特价NRVBS360BT3G即刻询购立享优惠#长期有货 |
|||
ONSEMI/安森美 |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
ON |
22+ |
SMB |
9000 |
只做原装假一罚十 |
|||
ON |
25+ |
SMB |
30000 |
原厂原装,价格优势 |
|||
ON |
SMB |
66540 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ON |
25+23+ |
DO-214AA |
16706 |
绝对原装正品全新进口深圳现货 |
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NRVBS360BT3G规格书下载地址
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NRVBS360BT3G数据表相关新闻
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参数 参数值 包装 标准卷带 系列 汽车级，AEC-Q101 零件状态 有源 二极管类型 肖特基 电压 - DC 反向（Vr）（最大值） 30V 电流 - 平均整流（Io） 1A 不同 If 时的电压 - 正向（Vf 410mV @ 1A 速度 快速恢复 = 200mA（Io） 反向恢复时间（trr） 快速恢复 = 200mA（Io） 不同Vr 时的电流 - 反向漏电流 1
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DdatasheetPDF页码索引
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