位置：首页 > IC中文资料 > NRVBS360BNT3G
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NRVBS360BNT3G | Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol | ONSEMI 安森美半导体 |   | |
NRVBS360BNT3G | Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol | ONSEMI 安森美半导体 | | |
NRVBS360BNT3G | 封装/外壳：DO-214AA，SMB 包装：管件 描述：DIODE SCHOTTKY 3A 60V 1202 SMB2 分立半导体产品 二极管 - 整流器 - 单 | ONSEMI 安森美半导体 | | |
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol | ONSEMI 安森美半导体 | | ||
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol | ONSEMI 安森美半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
2511 |
标准封装 |
8000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
ONSEMI/安森美 |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
ON |
24+ |
SMB |
15000 |
原装原标原盒 给价就出 全网最低 |
|||
ON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
ON(安森美) |
25+ |
标准封装 |
8000 |
原装，请咨询 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
24+ |
N/A |
67000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
ON |
25+23+ |
DO-214AA |
16706 |
绝对原装正品全新进口深圳现货 |
|||
ONSEMI/安森美 |
25+ |
SMB-2 |
880000 |
明嘉莱只做原装正品现货 |
|||
ON |
24+ |
SMB-2 |
25000 |
ON全系列可订货 |
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NRVBS360BNT3G规格书下载地址
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参数 参数值 包装 标准卷带 系列 汽车级，AEC-Q101 零件状态 有源 二极管类型 肖特基 电压 - DC 反向（Vr）（最大值） 30V 电流 - 平均整流（Io） 1A 不同 If 时的电压 - 正向（Vf 410mV @ 1A 速度 快速恢复 = 200mA（Io） 反向恢复时间（trr） 快速恢复 = 200mA（Io） 不同Vr 时的电流 - 反向漏电流 1
2021-10-12
DdatasheetPDF页码索引
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