位置：首页 > IC中文资料第6177页 > NP88N04MHE
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NP88N04MHE | MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=7300pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
NP88N04MHE | MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=7300pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | |
NP88N04MHE | ProductScoutAutomotive 文件：5.67799 Mbytes Page：6 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=7300pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=7300pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SWITCHINGN-CHANNELPOWERMOSFET 文件：314.44 Kbytes Page：12 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=7300pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=7300pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=7300pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=7300pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=7300pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
NP88N04MHE产品属性
- 类型
描述
- 型号
NP88N04MHE
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
22+ |
TO-220 |
100000 |
代理渠道/只做原装/可含税 |
|||
RENESAS/瑞萨 |
22+ |
TO-220 |
12500 |
瑞萨全系列在售,终端可出样品 |
|||
NEC |
23+ |
TO-262 |
12223 |
全新原装 |
|||
RENESAS/瑞萨 |
14+ |
ROHS |
880000 |
明嘉莱只做原装正品现货 |
|||
NEC |
23+ |
TO-220 |
6000 |
原装正品，支持实单 |
|||
NEC |
6000 |
面议 |
19 |
TO-262 |
|||
RENESAS/瑞萨 |
22+ |
na |
5623 |
只做原装正品现货!或订货假一赔十! |
|||
RENESAS |
22+ |
NA |
20000 |
原装正品支持实单 |
|||
VB |
T0-220 |
68900 |
原包原标签100%进口原装常备现货! |
||||
RENESAS |
ROHS |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
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NP88N04MHE规格书下载地址
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DdatasheetPDF页码索引
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