位置：首页 > IC中文资料第8404页 > NP88N04DHE
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NP88N04DHE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 4.3 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 7300 pF | NEC 瑞萨 |   | |
NP88N04DHE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 4.3 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 7300 pF TYP. • Built-in gate protection diode | RENESAS 瑞萨 | | |
NP88N04DHE | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 88A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
NP88N04DHE | Power MOSFETs-Power MOSFETs for Automotive | RENESAS 瑞萨 | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 4.3 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 7300 pF TYP. • Built-in gate protection diode | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 4.3 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 7300 pF | NEC 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET 文件：314.44 Kbytes Page：12 Pages | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 4.3 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 7300 pF TYP. • Built-in gate protection diode | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 4.3 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 7300 pF | NEC 瑞萨 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 88A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |
NP88N04DHE产品属性
- 类型
描述
- 型号
NP88N04DHE
- 功能描述
TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 88A I(D) | TO-262AA
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBsemi |
24+ |
TO263 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
R |
24+ |
TO263 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
VBsemi/台湾微碧 |
23+ |
TO263 |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
RENESAS/瑞萨 |
22+ |
TO-263 |
12500 |
瑞萨全系列在售,终端可出样品 |
|||
VBsemi |
23+ |
TO263 |
50000 |
全新原装正品现货,支持订货 |
|||
VB |
21+ |
TO263 |
10000 |
原装现货假一罚十 |
|||
NEC |
22+ |
NA |
3000 |
原装正品,支持实单 |
|||
RENESAS/瑞萨 |
23+ |
TO-263 |
89630 |
当天发货全新原装现货 |
|||
RENESAS/瑞萨 |
25+ |
NA |
860000 |
明嘉莱只做原装正品现货 |
|||
R |
23+ |
TO263 |
8560 |
受权代理!全新原装现货特价热卖! |
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NP88N04DHE规格书下载地址
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DdatasheetPDF页码索引
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