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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NP88N04DHE | MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=7300pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
NP88N04DHE | MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=7300pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=7300pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=7300pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SWITCHINGN-CHANNELPOWERMOSFET 文件：314.44 Kbytes Page：12 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=7300pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=7300pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=7300pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
NP88N04DHE产品属性
- 类型
描述
- 型号
NP88N04DHE
- 功能描述
TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 88A I(D) | TO-262AA
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBsemi/台湾微碧 |
21+ |
TO263 |
1037 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
VBsemi |
21+ |
TO263 |
10026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEC |
1822+ |
TO-263 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
NEC |
2023+ |
TO-263 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
NEC |
23+ |
TO-263 |
6000 |
原装正品，支持实单 |
|||
NEC-日本电气 |
24+25+/26+27+ |
TO-262-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
VBsemi/台湾微碧 |
TO263 |
699839 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
VBsemi |
2023+ |
TO263 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
|||
NEC |
08+(pbfree) |
TO-262 |
8866 |
||||
NEC |
23+ |
TO-263 |
37650 |
全新原装真实库存含13点增值税票! |
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NP88N04DHE规格书下载地址
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DdatasheetPDF页码索引
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