位置：首页 > IC中文资料第8918页 > NP88N04CHE
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NP88N04CHE | MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=7300pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
NP88N04CHE | MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=7300pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=7300pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=7300pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SWITCHINGN-CHANNELPOWERMOSFET 文件：314.44 Kbytes Page：12 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=7300pFTYP. •Built-ingateprotectiondiode | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=7300pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) •Lowinputcapacitance Ciss=7300pF | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
NP88N04CHE产品属性
- 类型
描述
- 型号
NP88N04CHE
- 制造商
Renesas Electronics Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VB |
21+ |
TO-220 |
10000 |
原装现货假一罚十 |
|||
NEC |
23+ |
TO-220 |
10000 |
公司只做原装正品 |
|||
NEC |
08+(pbfree) |
TO-220AB |
8866 |
||||
VBSEMI |
19+ |
TO-220 |
29600 |
绝对原装现货,价格优势! |
|||
NEC |
17+ |
TO-220 |
31518 |
原装正品 可含税交易 |
|||
RENESAS/瑞萨 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
R |
23+ |
TO263 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
NEC |
6000 |
面议 |
19 |
TO-220AB |
|||
RENESAS/瑞萨 |
24+23+ |
TO-220 |
12580 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
|||
RENESAS/瑞萨 |
2022+ |
TO-220 |
30000 |
进口原装现货供应,原装 假一罚十 |
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NP88N04CHE规格书下载地址
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NP88N04CHE数据表相关新闻
NOVATEK
公司原装现货
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DdatasheetPDF页码索引
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