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NP82价格

参考价格：￥27.9714

型号：NP826I 品牌：HUBBELL 备注：这里有NP82多少钱，2025年最近7天走势，今日出价，今日竞价，NP82批发/采购报价，NP82行情走势销售排行榜，NP82报价。

型号	功能描述	生产厂家企业	LOGO
NP82N03KDF	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP82N03KDF is N-channel MOS Field Effect Transistors designed for high current switching application. FEATURES • Channel temperature 175°C rating • Super low on-state resistance and 4.5 V gate drive type RDS(on)1 = 3.5 mΩ MAX. (VGS = 10 V,	RENESAS 瑞萨	RENESAS
NP82N03PUG	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 82A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP82N04MDG	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP82N04MDG and NP82N04NDG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Logic level • Super low on-state resistance RDS(on)1 = 4.2 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 4.5 V, ID = 41 A)	RENESAS 瑞萨	RENESAS
NP82N04MDG	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 82A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.2mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP82N04MDG-S18-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP82N04MDG and NP82N04NDG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Logic level • Super low on-state resistance RDS(on)1 = 4.2 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 4.5 V, ID = 41 A)	RENESAS 瑞萨	RENESAS
NP82N04MLG	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 82A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.2mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP82N04MUG	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP82N04MUG and NP82N04NUG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Non logic level • Super low on-state resistance RDS(on) = 4.2 mΩ MAX. (VGS = 10 V, ID = 41 A) • High current rating ID(DC) = ±82 A • Low i	RENESAS 瑞萨	RENESAS
NP82N04MUG	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 82A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.2mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP82N04MUG-S18-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP82N04MUG and NP82N04NUG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Non logic level • Super low on-state resistance RDS(on) = 4.2 mΩ MAX. (VGS = 10 V, ID = 41 A) • High current rating ID(DC) = ±82 A • Low i	RENESAS 瑞萨	RENESAS
NP82N04NDG	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP82N04MDG and NP82N04NDG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Logic level • Super low on-state resistance RDS(on)1 = 4.2 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 4.5 V, ID = 41 A)	RENESAS 瑞萨	RENESAS
NP82N04NDG	isc N-Channel MOSFET Transistor FEATURES Drain Current -ID= 82A@ TC=25℃ Drain Source Voltage -VDSS= 40V(Min) Static Drain-Source On-Resistance -RDS(on) = 4.2mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP82N04NDG-S18-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP82N04MDG and NP82N04NDG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Logic level • Super low on-state resistance RDS(on)1 = 4.2 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 4.5 V, ID = 41 A)	RENESAS 瑞萨	RENESAS
NP82N04NLG	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 82A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.2mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP82N04NUG	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP82N04MUG and NP82N04NUG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Non logic level • Super low on-state resistance RDS(on) = 4.2 mΩ MAX. (VGS = 10 V, ID = 41 A) • High current rating ID(DC) = ±82 A • Low i	RENESAS 瑞萨	RENESAS
NP82N04NUG	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 82A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.2mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP82N04NUG-S18-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP82N04MUG and NP82N04NUG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Non logic level • Super low on-state resistance RDS(on) = 4.2 mΩ MAX. (VGS = 10 V, ID = 41 A) • High current rating ID(DC) = ±82 A • Low i	RENESAS 瑞萨	RENESAS
NP82N04PDG	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 82A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP82N04PUG	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 82A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP82N055CHE	MOS FIELD EFFECT TRANSISTOR SWITCHING SWITCHING DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.6 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low input capacitance Ciss = 3500 pF	NEC 瑞萨	NEC
NP82N055CHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.6 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low input capacitance Ciss = 3500 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP82N055CHE	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 82A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.6mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP82N055CHE-S12-AZ	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.6 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low input capacitance Ciss = 3500 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP82N055CLE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 8.4 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 11 mΩ MAX. (VGS = 5.0 V, ID	NEC 瑞萨	NEC
NP82N055CLE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 8.4 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 11 mΩ MAX. (VGS = 5.0 V, ID = 41 A) RDS(on)3 = 12 mΩ MAX. (VGS = 4.5 V, ID = 41 A) • Low input capacitance Ciss = 4	RENESAS 瑞萨	RENESAS
NP82N055CLE	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 82A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.4mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP82N055CLE-S12-AZ	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 8.4 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 11 mΩ MAX. (VGS = 5.0 V, ID	NEC 瑞萨	NEC
NP82N055CLE-S12-AZ	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 8.4 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 11 mΩ MAX. (VGS = 5.0 V, ID = 41 A) RDS(on)3 = 12 mΩ MAX. (VGS = 4.5 V, ID = 41 A) • Low input capacitance Ciss = 4	RENESAS 瑞萨	RENESAS
NP82N055DHE	MOS FIELD EFFECT TRANSISTOR SWITCHING SWITCHING DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.6 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low input capacitance Ciss = 3500 pF	NEC 瑞萨	NEC
NP82N055DHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.6 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low input capacitance Ciss = 3500 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP82N055DHE	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 82A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.6mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP82N055DHE-S12-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.6 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low input capacitance Ciss = 3500 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP82N055DLE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 8.4 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 11 mΩ MAX. (VGS = 5.0 V, ID	NEC 瑞萨	NEC
NP82N055DLE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 8.4 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 11 mΩ MAX. (VGS = 5.0 V, ID = 41 A) RDS(on)3 = 12 mΩ MAX. (VGS = 4.5 V, ID = 41 A) • Low input capacitance Ciss = 4	RENESAS 瑞萨	RENESAS
NP82N055DLE	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 82A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.4mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP82N055DLE-S12-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 8.4 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 11 mΩ MAX. (VGS = 5.0 V, ID	NEC 瑞萨	NEC
NP82N055DLE-S12-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 8.4 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 11 mΩ MAX. (VGS = 5.0 V, ID = 41 A) RDS(on)3 = 12 mΩ MAX. (VGS = 4.5 V, ID = 41 A) • Low input capacitance Ciss = 4	RENESAS 瑞萨	RENESAS
NP82N055EHE	MOS FIELD EFFECT TRANSISTOR SWITCHING SWITCHING DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.6 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low input capacitance Ciss = 3500 pF	NEC 瑞萨	NEC
NP82N055EHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.6 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low input capacitance Ciss = 3500 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP82N055EHE	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 82A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.6mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP82N055EHE-E1-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.6 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low input capacitance Ciss = 3500 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP82N055EHE-E2-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.6 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low input capacitance Ciss = 3500 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP82N055ELE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 8.4 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 11 mΩ MAX. (VGS = 5.0 V, ID	NEC 瑞萨	NEC
NP82N055ELE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 8.4 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 11 mΩ MAX. (VGS = 5.0 V, ID = 41 A) RDS(on)3 = 12 mΩ MAX. (VGS = 4.5 V, ID = 41 A) • Low input capacitance Ciss = 4	RENESAS 瑞萨	RENESAS
NP82N055ELE	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 82A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.4mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP82N055ELE-E1-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 8.4 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 11 mΩ MAX. (VGS = 5.0 V, ID	NEC 瑞萨	NEC
NP82N055ELE-E1-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 8.4 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 11 mΩ MAX. (VGS = 5.0 V, ID = 41 A) RDS(on)3 = 12 mΩ MAX. (VGS = 4.5 V, ID = 41 A) • Low input capacitance Ciss = 4	RENESAS 瑞萨	RENESAS
NP82N055ELE-E2-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 8.4 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 11 mΩ MAX. (VGS = 5.0 V, ID	NEC 瑞萨	NEC
NP82N055ELE-E2-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 8.4 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 11 mΩ MAX. (VGS = 5.0 V, ID = 41 A) RDS(on)3 = 12 mΩ MAX. (VGS = 4.5 V, ID = 41 A) • Low input capacitance Ciss = 4	RENESAS 瑞萨	RENESAS
NP82N055KHE	MOS FIELD EFFECT TRANSISTOR SWITCHING SWITCHING DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.6 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low input capacitance Ciss = 3500 pF	NEC 瑞萨	NEC
NP82N055KHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.6 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low input capacitance Ciss = 3500 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP82N055KHE	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 82A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.6mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP82N055KHE-E1-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.6 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low input capacitance Ciss = 3500 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP82N055KHE-E2-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.6 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low input capacitance Ciss = 3500 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP82N055KLE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 8.4 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 11 mΩ MAX. (VGS = 5.0 V, ID	NEC 瑞萨	NEC
NP82N055KLE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 8.4 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 11 mΩ MAX. (VGS = 5.0 V, ID = 41 A) RDS(on)3 = 12 mΩ MAX. (VGS = 4.5 V, ID = 41 A) • Low input capacitance Ciss = 4	RENESAS 瑞萨	RENESAS
NP82N055KLE	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 82A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.4mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP82N055KLE-E1-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 8.4 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 11 mΩ MAX. (VGS = 5.0 V, ID	NEC 瑞萨	NEC
NP82N055KLE-E1-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 8.4 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 11 mΩ MAX. (VGS = 5.0 V, ID = 41 A) RDS(on)3 = 12 mΩ MAX. (VGS = 4.5 V, ID = 41 A) • Low input capacitance Ciss = 4	RENESAS 瑞萨	RENESAS
NP82N055KLE-E2-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 8.4 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 11 mΩ MAX. (VGS = 5.0 V, ID	NEC 瑞萨	NEC
NP82N055KLE-E2-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 8.4 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 11 mΩ MAX. (VGS = 5.0 V, ID = 41 A) RDS(on)3 = 12 mΩ MAX. (VGS = 4.5 V, ID = 41 A) • Low input capacitance Ciss = 4	RENESAS 瑞萨	RENESAS

NP82产品属性

类型
描述
型号
NP82
制造商
Hubbell Wiring Device-Kellems
功能描述
WALLPLATE, 2-G, 2) DUP, BR

NP82供应商更多...

更新时间：2025-11-20 20:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市金芯世纪电子有限公司	NP82N03KDF-E1-AY	NEC	22+	SOT-263	100000	代理渠道/只做原装/可含税	询价
深圳市得捷芯城科技有限公司	NP82N03PUG	NEC	24+	NA/	2000	优势代理渠道,原装正品,可全系列订货开增值税票	询价
贸泽芯城（深圳）电子科技有限公司	NP82N03KDF-E1-AY	NEC	23+	SOT-263	33000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市创盛芯科技有限公司	NP82N03PUG	NEC	25+	TO-263	2000	全新原装正品支持含税	询价
深圳市近平电子有限公司	NP82N03KDF	NEC	6000	面议	19	TO-263	询价
深圳市一线半导体有限公司	NP82N03KDF	NEC	24+	TO-263	8866		询价
深圳市星辰微电科技有限公司	NP82N03PUG	RENESAS/瑞萨	22+	TO-263	12500	瑞萨全系列在售,终端可出样品	询价
深圳市宏捷佳电子科技有限公司	NP82N03KDF	NEC	25+	TO-263	12300	独立分销商公司只做原装诚心经营免费试样正品保证	询价
深圳市芯皇电子有限公司	NP82N03PUG	RENESAS/瑞萨	22+	TO-263	9000	专业配单,原装正品假一罚十,代理渠道价格优	询价
深圳市河锋鑫科技有限公司	NP82N03KDF	NEC	2022+	TO-263	12888	原厂代理终端免费提供样品	询价

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DdatasheetPDF页码索引

NP16N06QLK-E1-AY 瑞智芯只有原装

NP90N04NUK-S18-AY 瑞智芯只有原装

NOSE687M002R0060 深圳市得捷芯城电子科技 AVX KEMET 尼康三洋钽电容代理商