位置：首页 > IC中文资料第8874页 > NP80N06PLG
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NP80N06PLG | MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP80N06MLG, NP80N06NLG, and NP80N06PLG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Logic level • Built-in gate protection diode • Super low on-state resistance - NP80N06MLG, NP80N06NLG RDS(on)1 = 8.6 mΩ MAX | RENESAS 瑞萨 |   | |
NP80N06PLG | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
NP80N06PLG | Power MOSFETs for Automotive | RENESAS 瑞萨 | | |
NP80N06PLG | N-Channel 60 V (D-S) MOSFET 文件：1.05533 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | |
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP80N06MLG, NP80N06NLG, and NP80N06PLG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Logic level • Built-in gate protection diode • Super low on-state resistance - NP80N06MLG, NP80N06NLG RDS(on)1 = 8.6 mΩ MAX | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP80N06MLG, NP80N06NLG, and NP80N06PLG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Logic level • Built-in gate protection diode • Super low on-state resistance - NP80N06MLG, NP80N06NLG RDS(on)1 = 8.6 mΩ MAX | RENESAS 瑞萨 | | ||
N-Channel 60 V (D-S) MOSFET 文件：1.05525 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
SWITCHING N-CHANNEL POWER MOS FET 文件：355.07 Kbytes Page：12 Pages | RENESAS 瑞萨 | | ||
N-Channel 60 V (D-S) MOSFET 文件：1.05517 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
SWITCHING N-CHANNEL POWER MOS FET 文件：355.07 Kbytes Page：12 Pages | RENESAS 瑞萨 | | ||
N-Channel 60 V (D-S) MOSFET FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization: | VBSEMI 微碧半导体 | | ||
N-Channel 60 V (D-S) MOSFET FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization: | VBSEMI 微碧半导体 | | ||
Fast Switching Speed 文件：67.88 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel 60 V (D-S) MOSFET 文件：1.28925 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
N-CHANNEL MOSFET in a TO-220 Plastic Package 文件：1.40473 Mbytes Page：8 Pages | FOSHAN 蓝箭电子 | |
NP80N06PLG产品属性
- 类型
描述
- 型号
NP80N06PLG
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
MOS FIELD EFFECT TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
NA/ |
53250 |
原装现货,当天可交货,原型号开票 |
|||
RENESAS/瑞萨 |
22+ |
TO-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
RENESAS/瑞萨 |
22+ |
TO-263 |
12500 |
瑞萨全系列在售,终端可出样品 |
|||
NPC |
2025+ |
SSOP |
3750 |
全新原厂原装产品、公司现货销售 |
|||
NEC |
25+ |
TO-263 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
VB |
21+ |
TO-263 |
10000 |
原装现货假一罚十 |
|||
NEOPOWER |
2450+ |
SOP8 |
6540 |
只做原厂原装正品终端客户免费申请样品 |
|||
Renesas |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
|||
NEC |
24+ |
TO-263 |
8866 |
||||
RENESAS/瑞萨 |
22+ |
TO-263 |
9000 |
专业配单,原装正品假一罚十,代理渠道价格优 |
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NP80N06PLG规格书下载地址
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DdatasheetPDF页码索引
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