DESCRIPTION

The NP80N06MLG, NP80N06NLG, and NP80N06PLG are N-channel MOS Field Effect Transistors designed for high current switching applications.

FEATURES

• Logic level

• Built-in gate protection diode

• Super low on-state resistance

- NP80N06MLG, NP80N06NLG

RDS(on)1 = 8.6 mΩ MAX. (VGS = 10 V, ID = 40 A)

RDS(on)2 = 13.3 mΩ MAX. (VGS = 4.5 V, ID = 35 A)

- NP80N06PLG

RDS(on)1 = 8.3 mΩ MAX. (VGS = 10 V, ID = 40 A)

RDS(on)2 = 13 mΩ MAX. (VGS = 4.5 V, ID = 35 A)

• High current rating

ID(DC) = ±80 A

• Low input capacitance

Ciss = 4600 pF TYP.

• Designed for automotive application and AEC-Q101 qualified