| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
80N04 | N-Channel 4 -V (D-S) MOSFET 文件：1.26306 Mbytes Page：7 Pages | VBSEMI 微碧半导体 |   | |
丝印代码：80N04P；N-CHANNEL ENHANCEMENT MODE POWER MOSFET ● General Description The TF80 N04 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .This device is ideal for load switch and battery protection applications. ● Features Advance high cell densityTrench technology Low RDS(ON) to mini | TUOFENG 拓锋半导体 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF | NEC 瑞萨 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
N |
24+ |
PG-TO26 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
NEC |
24+ |
TO-262 |
185 |
||||
VBsemi |
25+ |
TO263 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
VBsemi/台湾微碧 |
22+ |
PG-TO263-3-2 |
20000 |
公司只有原装 品质保证 |
|||
重庆平伟 |
20+ |
TO252 |
10000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
GOFORD |
2022+ |
TO-251252 |
50000 |
原厂代理 终端免费提供样品 |
|||
重庆平伟 |
23+ |
TO252 |
50000 |
全新原装正品现货,支持订货 |
|||
VBSEMI/台湾微碧 |
23+ |
TO263 |
50000 |
全新原装正品现货,支持订货 |
|||
VBSEMI |
23+ |
TO263 |
10130 |
全新 发货1-2天 |
|||
VBSEMI/微碧半导体 |
25+ |
TO263 |
90000 |
全新原装现货 |
80N04芯片相关品牌
80N04规格书下载地址
80N04参数引脚图相关
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80N04数据表相关新闻
80RXS1632AALGI
进口代理
2024-8-2380HCPS1848CBLGI原装现货，瑞萨价格超低
80HCPS1848CBLGI原装现货，瑞萨价格超低
2024-7-2580HCPS1848CBLGI瑞萨原装价格优势
80HCPS1848CBLGI瑞萨原装价格优势
2024-6-1780亿碳化硅项目建成投产！
80亿碳化硅项目建成投产！
2022-11-2380HCPS1848CBRI深圳市光华微科技有限公司18138231376
联系人：刘冬英 电话：0755-83203002 传真：0755-82532883 手机：18138231376、18806643356 QQ号：1546282226、微信号：18138231376 公司名称：深圳市光华微科技有限公司 公司地址：深圳市福田区振兴路华匀大厦1栋712室
2019-6-268100-4027
深圳科雨电子有限公司，联系人：卢小姐 手机：18975515225 原装正品 大量现货，有需要的可以联系我 QQ:97877805 微信：wei555222777
2019-6-20
DdatasheetPDF页码索引
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