| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HM80N04K | N-Channel Enhancement Mode Power MOSFET 文件：756.79 Kbytes Page：7 Pages | HMSEMI 华之美半导体 |   | |
HM80N04K | N沟道中压大电流MOS(100V以下) | HMPOWERSEMI 虹美功率 | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF | NEC 瑞萨 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AEROSEMI |
24+ |
SOT23-5L |
880000 |
明嘉莱只做原装正品现货 |
|||
AEROSEMI |
24+ |
SOT23-5 |
65200 |
一级代理/放心采购 |
|||
VBsemi |
23+ |
TO252 |
10065 |
原装正品,有挂有货,假一赔十 |
|||
AEROSEMI |
17+ |
DFN |
1005 |
全新 发货1-2天 |
|||
AEROSEMI |
2447 |
SOT23-5 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
HUAHONG/华虹 |
2026+ |
54687 |
百分百原装现货 实单必成 欢迎询价 |
||||
VBsemi |
23+ |
TO252 |
50000 |
全新原装正品现货,支持订货 |
|||
VBsemi |
21+ |
TO252 |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NK/南科功率 |
2025+ |
TO-252 |
986966 |
国产 |
|||
VBSEMI/台湾微碧 |
24+ |
TO252 |
60000 |
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HM80N04K规格书下载地址
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HMA121CR3-全间距微型扁平封装4针光耦合器 HMA124，HMA121系列和HMA2701系列由砷化镓红外发光二极管驱动在一个紧凑的4针微型扁平封装的硅光电晶体管。引线间距为2.54毫米。 HMAA2705由两个砷化镓红外发光二极管反向并联连接，驾驶一个单一的硅光电晶体管在一个紧凑的4针微型扁平封装。引线间距2.54毫米 应用 HMAA2705 •交流线路监控 •未知极性直流传感器 •电话线接收器 HMA121系列，HMA2701系列，HMA124
2012-11-7
DdatasheetPDF页码索引
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