60 V – 45 A – N-channel Power MOS FET Application: Automotive

Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 9.6 m MAX. (VGS = 10 V, ID = 23 A)  Low Ciss: Ciss = 1690 pF TYP. (VDS = 25 V)  Designed for automotive application an

Nch Single Power MOSFET 60V 45A 9.6mohm MP-3ZP/TO-252 Automotive

60 V – 45 A – N-channel Power MOS FET Application: Automotive

Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 9.6 m MAX. (VGS = 10 V, ID = 23 A)  Low Ciss: Ciss = 1690 pF TYP. (VDS = 25 V)  Designed for automotive application an

60 V – 45 A – N-channel Power MOS FET Application: Automotive

Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 9.6 m MAX. (VGS = 10 V, ID = 23 A)  Low Ciss: Ciss = 1690 pF TYP. (VDS = 25 V)  Designed for automotive application an

60 V ??45 A ??N-channel Power MOS FET Application: Automotive

文件：113.63 Kbytes Page：10 Pages

45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs

These are N-Channel enhancement mode power MOSFETs manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app