位置:首页 > IC中文资料 > NP45N06PUK
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NP45N06PUK | Nch Single Power MOSFET 60V 45A 9.6mohm MP-25ZP/TO-263 Automotive | RENESAS 瑞萨 | ||
60 V – 45 A – N-channel Power MOS FET Application: Automotive Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 9.6 m MAX. (VGS = 10 V, ID = 23 A) Low Ciss: Ciss = 1690 pF TYP. (VDS = 25 V) Designed for automotive application an | RENESAS 瑞萨 | |||
60 V – 45 A – N-channel Power MOS FET Application: Automotive Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 9.6 m MAX. (VGS = 10 V, ID = 23 A) Low Ciss: Ciss = 1690 pF TYP. (VDS = 25 V) Designed for automotive application an | RENESAS 瑞萨 | |||
45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as | FAIRCHILD 仙童半导体 | |||
45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as | INTERSIL | |||
45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as | FAIRCHILD 仙童半导体 | |||
45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as | INTERSIL | |||
45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel enhancement mode power MOSFETs manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in app | INTERSIL |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
23+ |
TO263 |
33000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
24+ |
N/A |
72000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
RENESAS/瑞萨 |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
|||
NEC |
26+ |
原厂原封装 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
RENESAS/瑞萨 |
2450+ |
TO-263 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
VBsemi |
24+ |
TO263 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
VB |
25+ |
TO-263 |
10000 |
原装现货假一罚十 |
|||
RENESAS/瑞萨 |
2022+ |
TO-263 |
800 |
原厂代理 终端免费提供样品 |
|||
NK/南科功率 |
2025+ |
TO-263-2 |
986966 |
国产 |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
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