型号 功能描述 生产厂家 企业 LOGO 操作
NP40N055EHE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 23 mΩ MAX. (VGS = 10 V, ID = 20 A) • Low input capacitance Ciss = 1070 pF T

NEC

瑞萨

NP40N055EHE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 23 mΩ MAX. (VGS = 10 V, ID = 20 A) • Low input capacitance Ciss = 1070 pF TYP. • Built-in gate protection diode

RENESAS

瑞萨

NP40N055EHE

Power MOSFETs-Power MOSFETs for Automotive

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 23 mΩ MAX. (VGS = 10 V, ID = 20 A) • Low input capacitance Ciss = 1070 pF TYP. • Built-in gate protection diode

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 23 mΩ MAX. (VGS = 10 V, ID = 20 A) • Low input capacitance Ciss = 1070 pF T

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 23 mΩ MAX. (VGS = 10 V, ID = 20 A) • Low input capacitance Ciss = 1070 pF T

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 23 mΩ MAX. (VGS = 10 V, ID = 20 A) • Low input capacitance Ciss = 1070 pF TYP. • Built-in gate protection diode

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET

文件:299.28 Kbytes Page:12 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET

文件:299.28 Kbytes Page:12 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET

文件:299.28 Kbytes Page:12 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 23 mΩ MAX. (VGS = 10 V, ID = 20 A) • Low input capacitance Ciss = 1070 pF TYP. • Built-in gate protection diode

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 23 mΩ MAX. (VGS = 10 V, ID = 20 A) • Low input capacitance Ciss = 1070 pF T

NEC

瑞萨

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 40A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 23mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 40A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 23mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 23 mΩ MAX. (VGS = 10 V, ID = 20 A) RDS(on)2 = 28 mΩ MAX. (VGS = 5.0 V, ID =

NEC

瑞萨

NP40N055EHE产品属性

  • 类型

    描述

  • 型号

    NP40N055EHE

  • 功能描述

    TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 40A I(D) | TO-263AB

更新时间:2025-9-29 9:06:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
24+
N/A
56000
一级代理-主营优势-实惠价格-不悔选择
NEC
1415+
TO-263
28500
全新原装正品,优势热卖
NEC
24+
TO-263
30000
只做正品原装现货
JD/晶导
23+
SMA(DO-214AC)
69820
终端可以免费供样,支持BOM配单!
NEC
24+
TO-220
9600
原装现货,优势供应,支持实单!
NEC
2016+
TO-220
3900
只做原装,假一罚十,公司可开17%增值税发票!
RENESAS(瑞萨)/IDT
24+
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
RENESAS/瑞萨
23+
TO-263
89630
当天发货全新原装现货
NEC
24+
TO-220
43200
郑重承诺只做原装进口现货
RENESAS
23+
TO263
8560
受权代理!全新原装现货特价热卖!

NP40N055EHE芯片相关品牌

NP40N055EHE数据表相关新闻

  • NOVATEK

    公司原装现货

    2022-4-14
  • NP16N06QLK-E1-AY 瑞智芯 只有原装

    深圳市瑞智芯科技有限公司 联系人:彭先生 QQ:2851196982 直线:0755-82991809 手机:13787628849 邮箱:pc@szruizhixin.com 地址:深圳市福田区中航路42号中航北苑大厦A座6A2 型号: NP16N06QLK-E1-AY 类别 分立半导体产品 晶体管 - FET,MOSFET - 阵列 制造商 Renesas Electronics America Inc 封装:8-PowerL

    2021-9-4
  • NP90N04NUK-S18-AY 瑞智芯 只有原装

    深圳市瑞智芯科技有限公司 联系人:彭先生 QQ:2851196982 直线:0755-82991809 手机:13787628849 邮箱:pc@szruizhixin.com 地址:深圳市福田区中航路42号中航北苑大厦A座6A2 型号:NP90N04NUK-S18-AY 类别 分立半导体产品 晶体管 - FET,MOSFET - 单个 制造商 Renesas Electronics America Inc 包装:50 封装

    2021-9-3
  • NOSE687M002R0060 深圳市得捷芯城电子科技 AVX KEMET 尼康 三洋 钽电容代理商

    NOSE687M002R0060 深圳市得捷芯城电子科技 AVX KEMET 尼康 三洋 钽电容代理商

    2020-8-24
  • NPA1006假一罚十

    只做原装正品,欢迎咨询。

    2020-7-16
  • NPA-730B-005D

    板机接口压力传感器

    2019-9-10