型号 功能描述 生产厂家&企业 LOGO 操作
NP40N055NHE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 23 mΩ MAX. (VGS = 10 V, ID = 20 A) • Low input capacitance Ciss = 1070 pF T

NEC

瑞萨

NP40N055NHE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 23 mΩ MAX. (VGS = 10 V, ID = 20 A) • Low input capacitance Ciss = 1070 pF TYP. • Built-in gate protection diode

RENESAS

瑞萨

NP40N055NHE

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 40A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 23mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

NP40N055NHE

Product Scout Automotive

文件:5.67799 Mbytes Page:6 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 23 mΩ MAX. (VGS = 10 V, ID = 20 A) • Low input capacitance Ciss = 1070 pF TYP. • Built-in gate protection diode

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 23 mΩ MAX. (VGS = 10 V, ID = 20 A) • Low input capacitance Ciss = 1070 pF T

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOS FET

文件:299.28 Kbytes Page:12 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 23 mΩ MAX. (VGS = 10 V, ID = 20 A) • Low input capacitance Ciss = 1070 pF T

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 23 mΩ MAX. (VGS = 10 V, ID = 20 A) • Low input capacitance Ciss = 1070 pF TYP. • Built-in gate protection diode

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 40A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 23mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 40A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 23mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 23 mΩ MAX. (VGS = 10 V, ID = 20 A) RDS(on)2 = 28 mΩ MAX. (VGS = 5.0 V, ID =

NEC

瑞萨

NP40N055NHE产品属性

  • 类型

    描述

  • 型号

    NP40N055NHE

  • 制造商

    NEC

  • 制造商全称

    NEC

  • 功能描述

    MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

更新时间:2025-8-11 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
24+
NA/
100
优势代理渠道,原装正品,可全系列订货开增值税票
RENESAS/瑞萨
22+
TO-263
100000
代理渠道/只做原装/可含税
RENESAS/瑞萨
22+
TO-262
12500
瑞萨全系列在售,终端可出样品
南麟
23+
TO-252
150000
一级代理全新原装现货免费试样质量保证提供技术支持
RENESAS/瑞萨
2022+
TO-263
30000
进口原装现货供应,原装 假一罚十
RENESAS/瑞萨
22+
TO-262
9000
专业配单,原装正品假一罚十,代理渠道价格优
日本NEC
23+
TO-262
33000
原厂授权一级代理,专业海外优势订货,价格优势、品种
R
25+
MP-25ZPTO
37650
独立分销商 公司只做原装 诚心经营 免费试样正品保证
RENESAS/瑞萨
23+
SOT252
8000
只做原装现货
RENESAS/瑞萨
23+
SOT252
7000

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