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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NP40N055KHE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 23 mΩ MAX. (VGS = 10 V, ID = 20 A) • Low input capacitance Ciss = 1070 pF T | NEC 瑞萨 |   | |
NP40N055KHE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 23 mΩ MAX. (VGS = 10 V, ID = 20 A) • Low input capacitance Ciss = 1070 pF TYP. • Built-in gate protection diode | RENESAS 瑞萨 | | |
NP40N055KHE | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 40A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 23mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
NP40N055KHE | Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages | RENESAS 瑞萨 | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 23 mΩ MAX. (VGS = 10 V, ID = 20 A) • Low input capacitance Ciss = 1070 pF T | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 23 mΩ MAX. (VGS = 10 V, ID = 20 A) • Low input capacitance Ciss = 1070 pF TYP. • Built-in gate protection diode | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 23 mΩ MAX. (VGS = 10 V, ID = 20 A) • Low input capacitance Ciss = 1070 pF TYP. • Built-in gate protection diode | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 23 mΩ MAX. (VGS = 10 V, ID = 20 A) • Low input capacitance Ciss = 1070 pF T | NEC 瑞萨 | | ||
包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANSISTOR 分立半导体产品 晶体管 - FET，MOSFET - 单个 | ETC 知名厂家 | ETC | | |
SWITCHING N-CHANNEL POWER MOS FET 文件：299.28 Kbytes Page：12 Pages | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET 文件：299.28 Kbytes Page：12 Pages | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 23 mΩ MAX. (VGS = 10 V, ID = 20 A) • Low input capacitance Ciss = 1070 pF TYP. • Built-in gate protection diode | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 40A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 23mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 23 mΩ MAX. (VGS = 10 V, ID = 20 A) • Low input capacitance Ciss = 1070 pF T | NEC 瑞萨 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 40A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 23mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 23 mΩ MAX. (VGS = 10 V, ID = 20 A) RDS(on)2 = 28 mΩ MAX. (VGS = 5.0 V, ID = | NEC 瑞萨 | |
NP40N055KHE产品属性
- 类型
描述
- 型号
NP40N055KHE
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
2016+ |
TO-220 |
3900 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
RENESAS(瑞萨)/IDT |
24+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
||||
RENESAS/瑞萨 |
23+ |
TO-263 |
89630 |
当天发货全新原装现货 |
|||
NEC |
24+ |
TO-220 |
43200 |
郑重承诺只做原装进口现货 |
|||
RENESAS |
23+ |
TO263 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
RENESAS/瑞萨 |
22+ |
TO-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
RENESAS |
24+ |
TO263 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
RENESAS/瑞萨 |
22+ |
TO-263 |
12500 |
瑞萨全系列在售,终端可出样品 |
|||
NEC |
24+ |
TO-263 |
503167 |
免费送样原盒原包现货一手渠道联系 |
|||
RENESAS/瑞萨 |
2022+ |
TO-263 |
30000 |
进口原装现货供应,原装 假一罚十 |
NP40N055KHE规格书下载地址
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