位置：首页 > IC中文资料第3141页 > NP180N055TUK
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NP180N055TUK | MOSFIELDEFFECTTRANSISTOR Description TheNP180N055TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=1.40mΩMAX.(VGS=10V,ID=90A) •LowCiss:Ciss=10700pFTYP.(VDS=25V) •Designedforautomotiveapplicati | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
NP180N055TUK | MOSFIELDEFFECTTRANSISTOR Description TheNP180N055TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=1.40mMAX.(VGS=10V,ID=90A) LowCiss:Ciss=10700pFTYP.(VDS=25V) Designedforautomotiveapplication | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
NP180N055TUK | ProductScoutAutomotive 文件：5.67799 Mbytes Page：6 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
MOSFIELDEFFECTTRANSISTOR Description TheNP180N055TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=1.40mMAX.(VGS=10V,ID=90A) LowCiss:Ciss=10700pFTYP.(VDS=25V) Designedforautomotiveapplication | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR Description TheNP180N055TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=1.40mMAX.(VGS=10V,ID=90A) LowCiss:Ciss=10700pFTYP.(VDS=25V) Designedforautomotiveapplication | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR Description TheNP180N055TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=1.40mΩMAX.(VGS=10V,ID=90A) •LowCiss:Ciss=10700pFTYP.(VDS=25V) •Designedforautomotiveapplicati | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR Description TheNP180N055TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=1.40mMAX.(VGS=10V,ID=90A) LowCiss:Ciss=10700pFTYP.(VDS=25V) Designedforautomotiveapplication | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR Description TheNP180N055TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=1.40mΩMAX.(VGS=10V,ID=90A) •LowCiss:Ciss=10700pFTYP.(VDS=25V) •Designedforautomotiveapplicati | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR 文件：123.41 Kbytes Page：8 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR Description TheNP180N055TUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance ⎯RDS(on)=2.3mΩMAX.(VGS=10V,ID=90A) •LowCiss:Ciss=9500pFTYP.(VDS=25V) •Designedforautomotiveapplicationand | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
ProductScoutAutomotive 文件：5.67799 Mbytes Page：6 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
TrenchGatePowerMOSFET TrenchGatePowerMOSFET N-ChannelEnhancementMode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity | IXYS IXYS Integrated Circuits Division |  | | |
TrenchGatePowerMOSFET TrenchGatePowerMOSFET N-ChannelEnhancementMode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity | IXYS IXYS Integrated Circuits Division | | | |
TrenchGatePowerMOSFET TrenchGatePowerMOSFET N-ChannelEnhancementMode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity | IXYS IXYS Integrated Circuits Division | | |
NP180N055TUK产品属性
- 类型
描述
- 型号
NP180N055TUK
- 制造商
Renesas Electronics Corporation
- 功能描述
MOSFET - Rail/Tube
- 制造商
Renesas Electronics Corporation
- 功能描述
MOSFET N-CH 55V 180A TO-263
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
22+ |
MP-25ZT7pinTO-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
RENESAS(瑞萨)/IDT |
23+ |
TO2637 |
6000 |
诚信服务，绝对原装原盘 |
|||
RENESAS(瑞萨)/IDT |
23+ |
TO-263-6 |
8000 |
全新、原装 |
|||
RENESAS |
MP-25ZT7pinTO-263 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
||||
RENESAS/瑞萨 |
22+ |
TO-263-7p |
12500 |
瑞萨全系列在售,终端可出样品 |
|||
NEC |
23+ |
TO-263-7-3 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
RENESAS(瑞萨)/IDT |
23+ |
TO2636 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
RENESAS/瑞萨 |
TO-263-7 |
90000 |
公司集团化配单-有更多数量-免费送样-原包装正品现货- |
||||
Renesas(瑞萨) |
21+ |
A/N |
20000 |
专注品牌,只做原装,询价必回!!! |
|||
NEC |
2022 |
TO-263-7-3 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
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NP180N055TUK规格书下载地址
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