Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT−223 Package

Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • Diode Clamp Between Gate and Source • ESD Protection − HBM 5000 V • Active Over−Voltage Gate to Drain Clamp • Scalable to Lower or Higher RDS(on) • Internal Series Gate Resistance • Pb−Free P

受保护的功率 MOSFET，N 沟道，逻辑电平，带箝位，逻辑电平，2.6 A，52 V，带 ESD 防护

PROTECTED POWER MOSFET

文件：66.65 Kbytes Page：6 Pages

Protected Power MOSFET

文件：72.39 Kbytes Page：6 Pages

Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT−223 Package

Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • Diode Clamp Between Gate and Source • ESD Protection − HBM 5000 V • Active Over−Voltage Gate to Drain Clamp • Scalable to Lower or Higher RDS(on) • Internal Series Gate Resistance • Pb−Free P

Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT−223 Package

Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • Diode Clamp Between Gate and Source • ESD Protection − HBM 5000 V • Active Over−Voltage Gate to Drain Clamp • Scalable to Lower or Higher RDS(on) • Internal Series Gate Resistance • Pb−Free P

Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT−223 Package

Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • Diode Clamp Between Gate and Source • ESD Protection − HBM 5000 V • Active Over−Voltage Gate to Drain Clamp • Scalable to Lower or Higher RDS(on) • Internal Series Gate Resistance • Pb−Free P

Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT−223 Package

Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • Diode Clamp Between Gate and Source • ESD Protection − HBM 5000 V • Active Over−Voltage Gate to Drain Clamp • Scalable to Lower or Higher RDS(on) • Internal Series Gate Resistance • Pb−Free P

Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT−223 Package

Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • Diode Clamp Between Gate and Source • ESD Protection − HBM 5000 V • Active Over−Voltage Gate to Drain Clamp • Scalable to Lower or Higher RDS(on) • Internal Series Gate Resistance • Pb−Free P

Protected Power MOSFET

文件：72.39 Kbytes Page：6 Pages

Protected Power MOSFET

文件：72.39 Kbytes Page：6 Pages

PROTECTED POWER MOSFET

文件：66.65 Kbytes Page：6 Pages

Protected Power MOSFET

文件：72.39 Kbytes Page：6 Pages

N-Channel 60-V (D-S) MOSFET

文件：1.01054 Mbytes Page：8 Pages

PROTECTED POWER MOSFET

文件：66.65 Kbytes Page：6 Pages

Protected Power MOSFET

文件：72.39 Kbytes Page：6 Pages

Protected Power MOSFET

文件：72.39 Kbytes Page：6 Pages

9.0 A, 52 V, N?묬hannel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package

Power MOSFET 9.0 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • Diode Clamp Between Gate and Source • ESD Protection − HBM 5000 V • Active Over−Voltage Gate

Power MOSFET

Power MOSFET 9.0 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • Diode Clamp Between Gate and Source • ESD Protection − HBM 5000 V • Active Over−Voltage Gate

Power MOSFET

文件：87.7 Kbytes Page：7 Pages

Power MOSFET

文件：87.7 Kbytes Page：7 Pages

Power MOSFET

文件：76.8 Kbytes Page：7 Pages