Power MOSFET

Power MOSFET 9.0 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • Diode Clamp Between Gate and Source • ESD Protection − HBM 5000 V • Active Over−Voltage Gate

9.0 A, 52 V, N?묬hannel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package

Power MOSFET 9.0 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • Diode Clamp Between Gate and Source • ESD Protection − HBM 5000 V • Active Over−Voltage Gate

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：管件 描述：IC PWR DRIVER N-CHANNEL 1:1 DPAK 集成电路（IC） 配电开关，负载驱动器

Power MOSFET 9.0 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection

Power MOSFET

文件：76.8 Kbytes Page：7 Pages

9.0 A, 52 V, N?묬hannel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package

Power MOSFET 9.0 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • Diode Clamp Between Gate and Source • ESD Protection − HBM 5000 V • Active Over−Voltage Gate

Power MOSFET

Power MOSFET 9.0 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • Diode Clamp Between Gate and Source • ESD Protection − HBM 5000 V • Active Over−Voltage Gate

9.0 A, 52 V, N?묬hannel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package

Power MOSFET 9.0 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • Diode Clamp Between Gate and Source • ESD Protection − HBM 5000 V • Active Over−Voltage Gate

Power MOSFET

文件：76.8 Kbytes Page：7 Pages

Power MOSFET

文件：76.8 Kbytes Page：7 Pages

N-Channel 60 V (D-S) MOSFET

文件：1.00404 Mbytes Page：8 Pages

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT） 描述：IC PWR DRIVER N-CHANNEL 1:1 DPAK 集成电路（IC） 配电开关，负载驱动器

Power MOSFET

文件：76.8 Kbytes Page：7 Pages

Power MOSFET

文件：76.8 Kbytes Page：7 Pages

9.0 A, 52 V, N?묬hannel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package

Power MOSFET 9.0 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • Diode Clamp Between Gate and Source • ESD Protection − HBM 5000 V • Active Over−Voltage Gate

Power MOSFET

文件：87.7 Kbytes Page：7 Pages

Power MOSFET

文件：87.7 Kbytes Page：7 Pages