NID9N05CL价格

参考价格:¥2.5684

型号:NID9N05CLT4G 品牌:ONSemi 备注:这里有NID9N05CL多少钱,2025年最近7天走势,今日出价,今日竞价,NID9N05CL批发/采购报价,NID9N05CL行情走势销售排行榜,NID9N05CL报价。
型号 功能描述 生产厂家&企业 LOGO 操作
NID9N05CL

Power MOSFET

Power MOSFET 9.0 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • Diode Clamp Between Gate and Source • ESD Protection − HBM 5000 V • Active Over−Voltage Gate

ONSEMI

安森美半导体

NID9N05CL

9.0 A, 52 V, N?묬hannel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package

Power MOSFET 9.0 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • Diode Clamp Between Gate and Source • ESD Protection − HBM 5000 V • Active Over−Voltage Gate

ONSEMI

安森美半导体

NID9N05CL

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:管件 描述:IC PWR DRIVER N-CHANNEL 1:1 DPAK 集成电路(IC) 配电开关,负载驱动器

ONSEMI

安森美半导体

NID9N05CL

Power MOSFET

文件:76.8 Kbytes Page:7 Pages

ONSEMI

安森美半导体

9.0 A, 52 V, N?묬hannel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package

Power MOSFET 9.0 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • Diode Clamp Between Gate and Source • ESD Protection − HBM 5000 V • Active Over−Voltage Gate

ONSEMI

安森美半导体

Power MOSFET

Power MOSFET 9.0 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • Diode Clamp Between Gate and Source • ESD Protection − HBM 5000 V • Active Over−Voltage Gate

ONSEMI

安森美半导体

9.0 A, 52 V, N?묬hannel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package

Power MOSFET 9.0 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • Diode Clamp Between Gate and Source • ESD Protection − HBM 5000 V • Active Over−Voltage Gate

ONSEMI

安森美半导体

Power MOSFET

文件:76.8 Kbytes Page:7 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:76.8 Kbytes Page:7 Pages

ONSEMI

安森美半导体

N-Channel 60 V (D-S) MOSFET

文件:1.00404 Mbytes Page:8 Pages

VBSEMI

微碧半导体

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR)剪切带(CT) 描述:IC PWR DRIVER N-CHANNEL 1:1 DPAK 集成电路(IC) 配电开关,负载驱动器

ONSEMI

安森美半导体

Power MOSFET

文件:76.8 Kbytes Page:7 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:76.8 Kbytes Page:7 Pages

ONSEMI

安森美半导体

9.0 A, 52 V, N?묬hannel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package

Power MOSFET 9.0 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features • Diode Clamp Between Gate and Source • ESD Protection − HBM 5000 V • Active Over−Voltage Gate

ONSEMI

安森美半导体

Power MOSFET

文件:87.7 Kbytes Page:7 Pages

ONSEMI

安森美半导体

Power MOSFET

文件:87.7 Kbytes Page:7 Pages

ONSEMI

安森美半导体

NID9N05CL产品属性

  • 类型

    描述

  • 型号

    NID9N05CL

  • 功能描述

    MOSFET 52V 9A N-Channel

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-8-12 20:57:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/安森美
25+
TO-252
37674
ON/安森美全新特价NID9N05CLT4G即刻询购立享优惠#长期有货
ON/安森美
24+
NA/
2500
优势代理渠道,原装正品,可全系列订货开增值税票
VBsemi
21+
TO251
10026
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ON
23+
TO-252
160000
正规渠道,只有原装!
ON
6000
面议
19
TO-252
ON/安森美
24+
TO-252
505348
免费送样原盒原包现货一手渠道联系
ON/安森美
24+
TO-252
5000
只做原厂渠道 可追溯货源
VBsemi
24+
TO251
9000
只做原装正品 有挂有货 假一赔十
ON
23+
SOT252
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
O
22+
TO-251
25000
只做原装进口现货,专注配单

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