型号 功能描述 生产厂家&企业 LOGO 操作
NEZ1011-8E

8WX,Ku-BANDPOWERGaAsMESFET

DESCRIPTION TheNEZ1011-8EandNEZ1414-8EarepowerGaAsMESFETswhichprovidehighgain,highefficiencyandhighoutputinX,Ku-band.Theinternalinputandoutputmatchingenablesguaranteedperformancetobeachievedwithonlya50Ωexternalcircuit.Toreducethermalresistancethedevic

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC
NEZ1011-8E

GaAsMESFET

DESCRIPTION TheNEZ1011-8EispowerGaAsFETwhichprovideshigh gain,highefficiencyandhighoutputpowerinKu-band. Theinternalinputandoutputmatchingenablesguaranteed performancetobeachievedwithonlya50Wexternal circuit. Toreducethermalresistance,thedevicehasaPHS

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

10.70-11.70GHz8-WattInternallyMatchedPowerFET

FEATURES •10.70–11.70GHzBandwidth •Input/OutputImpedanceMatchedto50Ohms •+39.0dBmOutputPowerat1dBCompression •6.0dBPowerGainat1dBCompression •30PowerAddedEfficiency •-46dBcIM3atPO=28.5dBmSCL •100TestedforDC,RF,andRTH

Excelics

Excelics Semiconductor, Inc.

Excelics

X,Ku-BandInternallyMatchedFET

DESCRIPTION TheFLM1011-8FisapowerGaAsFETthatisinternallymatchedforstandardcommunicationbandstoprovideoptimumpowerandgainina50ohmsystem. Eudyna’sstringentQualityAssuranceProgramassuresthehighestreliabilityandconsistentperformance. FEATURES •HighOutputPower

EUDYNA

Eudyna Devices Inc

EUDYNA

MICROWAVEPOWERGaAsFET

Theinformationcontainedhereinispresentedonlyasaguidefortheapplicationsofourproducts.NoresponsibilityisassumedbyTOSHIBAforanyinfringementsofpatentsorotherrightsofthethirdpartieswhichmayresultsfromitsuse,Nolicenseisgrantedbyimplicationorotherwiseunder

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

NEZ1011-8E产品属性

  • 类型

    描述

  • 型号

    NEZ1011-8E

  • 制造商

    NEC

  • 制造商全称

    NEC

  • 功能描述

    8W X, Ku-BAND POWER GaAs MESFET

更新时间:2025-5-17 16:44:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
23+
27035
原厂授权一级代理,专业海外优势订货,价格优势、品种
NEC
23+
TO-59
8510
原装正品代理渠道价格优势
24+
3000
公司存货
NEC
24+
220
现货供应
NEC
6000
面议
19
DIP/SMD

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